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Gate-structure magnetoelectric magnetic filed sensor and manufacturing method thereof

A magnetic field sensor, magnetoelectric technology, applied in the field of sensing, can solve problems such as no report, no sensor device, no report, etc., to achieve the effect of improving measurement sensitivity

Inactive Publication Date: 2012-07-04
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] From the domestic and foreign research in this area, people's research is concentrated on the rectangular (the most commonly used size is 12mm × 6mm) magnetostrictive material and a piezoelectric material with the same area, all of them stay in the laboratory. There is no report on the thin rod structure, no report on the rare earth permanent magnet directly pasted on the sensor, and no report on the grid structure composed of thin rods.
And the existing research is limited to laboratory research, the bias magnetic field is usually generated by a large electromagnet, and there is no report of a real practical sensor device
There is no report on the new magnetic sensor made by combining the gate structure magnetostrictive material and the piezoelectric material.

Method used

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  • Gate-structure magnetoelectric magnetic filed sensor and manufacturing method thereof
  • Gate-structure magnetoelectric magnetic filed sensor and manufacturing method thereof
  • Gate-structure magnetoelectric magnetic filed sensor and manufacturing method thereof

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Embodiment Construction

[0030] Below in conjunction with example for further description.

[0031] Use Pb(Zr 1-x Ti x )O 3 (PZT5H) The silver electrode on the surface of the material is divided into 4 strips, each with a width of 1mm and an interval of about 0.7mm; a thin rod of Terfenol-D (TbDyFe) magnetic extension material with a length of 12mm, a width of 0.9mm, and a height of 1mm is pressed The two sides of the electric material are pasted respectively, and the easy magnetization direction of the thin rod of the magnetic extension material is along the long direction of the rod, and then the connection between the electrode and the wire is made. The example of the present invention adopts a series method, and the cuboid NdFeB permanent magnet is pasted, and its axial surface field is 420Oe The experimental results show that the magnetic sensitivity coefficient of the sensor reaches 176mV / Oe at a low frequency of 0.1-65KHz, while the magnetic sensitivity coefficient of the sensor made of a who...

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Abstract

The invention relates to a gate-structure magnetoelectric magnetic filed sensor and a manufacturing method thereof, belonging to the technical field of sensors. The gate-structure magnetoelectric magnetic filed sensor comprises piezoelectric material, a plurality of magnetostrictive thin rods and permanent magnetic material. The piezoelectric material is provided with gate-shaped conductive silver films on which electrode leads are arranged; the number and the widths of the gate-shaped conductive silver films correspond to the magnetostrictive thin rods arranged in parallel on the gate-shapedconductive silver films; and the permanent magnetic material is arranged in parallel on the magnetostrictive thin rod positioned in the middle position. The measuring sensitivity of the gate-structure magnetoelectric magnetic filed sensor to an alternating magnetic filed is markedly improved, the alternating magnetic filed and the alternating current generated by the electrode leads can be detected, voltage output signals which are proportional to detected alternating magnetic signals can be generated without power supplying, and the output sensitivity hardly changes along with the change of frequency in a wider frequency range. The invention can be used for measuring the alternating magnetic signals and alternating current signals and generating power in the alternating magnetic filed environment.

Description

technical field [0001] The invention relates to the field of sensor technology, in particular to a magnetoelectric magnetic field sensor manufactured by adopting a gate structure and using the principle of magneto-induced piezoelectric effect of ferromagnetoelectric laminated materials. Background technique [0002] The magneto-piezoelectric effect refers to the effect of using a magnetic field to generate an electric field, that is, the effect of using a magnetic signal to generate an electrical signal output. The material with greater magnetoelectric sensitivity and promising application prospects is the laminated structural material composed of magnetostrictive materials and piezoelectric materials. It uses magnetostrictive materials to generate magnetostriction under the action of an external magnetic field, so that Tangential stress is generated on the surface of the piezoelectric material, and the piezoelectric material is subjected to this stress to generate charges o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/02G01R19/00H02N2/00
Inventor 鲍丙豪骆英
Owner JIANGSU UNIV