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A composition and a multipolymer used in organic antireflective coating

An anti-reflection coating and copolymer technology, which is applied in the coating, optical mechanical equipment, photo-engraving process of pattern surface, etc. Etch rate, effect of good process benefit

Inactive Publication Date: 2013-05-08
KOREA KUMHO PETROCHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the current situation, anti-reflective coatings capable of satisfying ultrafine patterning using ArF light have not yet been developed.

Method used

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  • A composition and a multipolymer used in organic antireflective coating
  • A composition and a multipolymer used in organic antireflective coating
  • A composition and a multipolymer used in organic antireflective coating

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0130] Example 1: Preparation of Organic Antireflective Coating Composition A

[0131] The polymer 7g that is used for the organic anti-reflection coating obtained in Synthesis Example 1, the light absorber A6g that is obtained in Synthesis Example 3, 2g tetramethoxymethyl glycoluril and 1g thermal acid generator with chemical formula 23 structure It was dissolved in 984 g of propylene glycol monomethyl ether acetate, and then filtered through a membrane filter with a pore size of 0.2 μm to obtain an organic antireflective coating composition A.

example 2

[0132] Example 2: Preparation of Organic Antireflective Coating Composition B

[0133] The polymer 7g that is used for the organic anti-reflection coating that obtains in synthesis example 1, the light absorber B8g that obtains in synthesis example 3, 2.1g tetramethoxymethyl glycoluril and 1g thermal acid with chemical formula 23 structure generate The agent was dissolved in 981.9 g of ethyl lactate, and then filtered through a membrane filter with a pore size of 0.2 μm to obtain an organic antireflective coating composition B.

example 3

[0134] Example 3: Preparation of Organic Antireflective Coating Composition C

[0135] The polymer 8g that is used for the organic anti-reflection coating obtained in Synthesis Example 1, the light absorber B10g that obtains in the above-mentioned Synthesis Example 4, 2.7g tetramethoxymethyl glycoluril and 0.54g heat having the chemical formula 23 structure The acid generator was dissolved in 978.76 g of propylene glycol monomethyl ether acetate, and then filtered through a membrane filter with a pore size of 0.2 μm to obtain an organic antireflective coating composition C.

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Abstract

The invention provides an organic antireflective coating composition, which comprises a multipolymer, a light absorber, a hot acid generating agent and a firming agent respectively represented by the following chemical formula 1; wherein R1, R2 and R3 are mutually independent; R1 represents hydrogen atom or the alkyl with 1 to 10 carbon atoms; R2 represents hydrogen atom or the alkyl with 1 to10 carbon atoms or the aryl alkyl with 1 to 10 carbon atoms; R3 represents hydrogen atom or methyl; m and n are repeated units in the main chain; m and n meet the requirements that, m and n make 1, m / (m and n) is larger than 0.05 and smaller than 0.95, and n / (m and n) is larger than 0.05 and less than 0.95. The antireflective coating adopting the multipolymer of the invention shows excellent cohesive performance, storage stability, high dry etching rate and splendid resolvability both in C / H pattern and L / S pattern.

Description

technical field [0001] The invention relates to an organic anti-reflection coating composition, which is used for preventing reflection on an inner coating and can prevent standing waves in a photolithography process, and has a high dry etching rate. More specifically, the present invention provides a novel polymer, a light absorber and an organic antireflective coating composition containing the above novel polymer and light absorber that can be used in the production of organic antireflection coatings, wherein the above organic Anti-reflective coatings facilitate ultrafine patterning of semiconductors using ArF excimer lasers. [0002] The present invention also relates to a method for patterning a semiconductor device using the above-mentioned organic antireflection coating composition. Background technique [0003] Recently, highly integrated semiconductor devices require ultra-fine patterns with a line width of 0.10 microns or finer in the production of super-LST, etc....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F222/06C08F8/14C08F220/14C08F220/18C09D135/00C09D133/10G03F7/00G03F7/26H01L21/00H01L21/027
Inventor 金铭雄朴柱铉林永泽金亨基李俊昊李钟敦赵承德
Owner KOREA KUMHO PETROCHEMICAL CO LTD