Manufacture method of solar silicon single crystal
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 徐国六
- Publication Date
- 2009-10-28
Abstract
Description
technical field
[0001] The invention relates to a method for preparing solar silicon single crystals, in particular to a method for preparing solar silicon single crystals by using waste polysilicon leftovers. Market demand for solar-grade silicon monocrystalline for batteries. Background technique
[0002] At present, solar photovoltaic power generation plays an important role in renewable energy. Photovoltaic energy is considered to be the most important energy source in the 21st century. Because photovoltaic power generation has incomparable advantages: cleanliness, safety, universality, and long life , Maintenance-free, practical, resource adequacy and potential economy.
[0003] Czochralski silicon single crystal is the most basic material for manufacturing semiconductor devices such as large-scale integrated circuits, and is also an important material for solar cells. At present, the raw materials used by manufacturers at home and abroad to prepare solar polysilicon ...