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Magnetic sensor element and method for manufacturing the same

A technology of magnetic sensors and components, which is applied to devices applying electro-magnetic effects, using electromagnetic devices for magnetic field measurement, electrical components, etc., to achieve the effect of avoiding influences

Inactive Publication Date: 2011-08-17
FUJIKURA LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]1. In applying a bias magnetic field with a wound coil, there are problems such as difficulty in miniaturization of components, complicated structure, and large power consumption
[0006]2. In applying a bias magnetic field through a thin film coil, there are problems such as complex structure and large power consumption
[0007]3. In applying a bias magnetic field through sheet magnets and block magnets, there are problems such as difficult control of the magnetic field intensity, complicated assembly process, and difficulty in obtaining high mechanical strength.
[0008]4. In applying a bias magnetic field through a thin film magnet, there is a problem that the magnetic field intensity is difficult to control
[0009] Here, the reason why it is difficult to control the strength of the magnetic field when applying the bias magnetic field through the magnet is because the characteristics of the magnet determine the size of the bias magnetic field, and it is difficult to correct the bias caused by the magnetic field itself. Due to the deviation of the bias magnetic field caused by the characteristic deviation of the

Method used

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  • Magnetic sensor element and method for manufacturing the same
  • Magnetic sensor element and method for manufacturing the same
  • Magnetic sensor element and method for manufacturing the same

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Embodiment

[0080] Hereinafter, the present invention will be specifically described with reference to Examples. In addition, the present invention is not limited to these Examples. Figure 4A , Is a top view of the magnetoresistance effect element made according to this embodiment, Figure 4B Is along Figure 4A Sectional view of the T-T line.

[0081] A resist pattern is provided on the non-magnetic substrate 1 made of silicon, and the opening is approximately rectangular by photolithography of the resist pattern of the portion corresponding to the hard magnetic film 2, and the Pt composition ratio is 50% by sputtering. After forming the FePt film, the hard magnetic film 2 is patterned into a substantially rectangular shape by removing the resist by stripping. By subjecting the sputtered FePt to a heat treatment at a temperature of 600° C. or higher, FePt (L10FePt) having an L10 specification structure is obtained.

[0082] Then, plasma CVD is used to remove SiO 2 In the method of covering ...

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Abstract

A magnetic sensor element is provided with a hard magnetic material film (2) formed on a nonmagnetic substrate (1); an insulating layer (3) covering the hard magnetic material film (2); and a soft magnetic material film (4) formed on the insulating layer (3), and the magnetizing direction of the hard magnetic material film (2) is at an angle (Theta) to the longitudinal direction of the soft magnetic material film (4). In a planar view of the nonmagnetic substrate (1), a region whereupon the soft magnetic material film (2) is formed is preferably within a region larger than that where the softmagnetic material film (4) is formed, and that all the regions whereupon the soft magnetic material film (4) is formed overlap the region whereupon the hard magnetic material film (2) is formed. Uniform bias magnetic field can be obtained from the magnetic sensor element.

Description

technical field [0001] The present invention relates to a thin-film magnetoresistance effect element known as a high-sensitivity magnetic sensor and other magnetic sensor elements. Conventionally, such devices have been used, for example, in electronic compasses that detect geomagnetism to indicate azimuth, rotary encoders, and biomagnetic measurements. [0002] This application claims the priority of Japanese Patent Application No. 2007-007979 filed in Japan on January 17, 2007 and Japanese Patent Application No. 2008-004880 filed in Japan on January 11, 2008, and uses the contents thereof here. Background technique [0003] Conventionally, magnetoresistance effect elements have characteristics in which impedance changes symmetrically with respect to positive and negative magnetic fields. Therefore, in order to detect positive and negative magnetic fields near zero magnetic field, it is necessary to apply a bias magnetic field to the magnetoresistance effect element so th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/00G01R33/06H01L43/08G01R33/09
CPCG01R33/093G01R33/12G01R33/1269B82Y25/00Y10T428/21Y10T428/31678
Inventor 大森贤一相沢卓也中尾知丹健二
Owner FUJIKURA LTD