Magnetic sensor element and method for manufacturing the same
A technology of magnetic sensors and components, which is applied to devices applying electro-magnetic effects, using electromagnetic devices for magnetic field measurement, electrical components, etc., to achieve the effect of avoiding influences
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[0080] Hereinafter, the present invention will be specifically described with reference to Examples. In addition, the present invention is not limited to these Examples. Figure 4A , Is a top view of the magnetoresistance effect element made according to this embodiment, Figure 4B Is along Figure 4A Sectional view of the T-T line.
[0081] A resist pattern is provided on the non-magnetic substrate 1 made of silicon, and the opening is approximately rectangular by photolithography of the resist pattern of the portion corresponding to the hard magnetic film 2, and the Pt composition ratio is 50% by sputtering. After forming the FePt film, the hard magnetic film 2 is patterned into a substantially rectangular shape by removing the resist by stripping. By subjecting the sputtered FePt to a heat treatment at a temperature of 600° C. or higher, FePt (L10FePt) having an L10 specification structure is obtained.
[0082] Then, plasma CVD is used to remove SiO 2 In the method of covering ...
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