Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof
A unidirectional thyristor and gate technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as device inability to conduct, gate sensitivity rise, device case temperature rise, etc. Good controllability and consistency, increase product qualification rate, and improve product performance
Active Publication Date: 2011-02-16
JIANGSU JIEJIE MICROELECTRONICS
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] At present, when the gate sensitive trigger one-way thyristor chip is in use, I GT Large discreteness, unable to meet customer requirements
The impact of the use environment and the power consumption of the device itself will cause the temperature of the device case to rise, the gate sensitivity will increase with the temperature, and the trigger current I GT becomes smaller, causing false triggering
Similarly, at low temperature, the case temperature of the device drops, the gate sensitivity decreases with temperature, and the trigger current I GT become larger, causing the device to fail to conduct at the rated current of the circuit design
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] Such as Figures 1 to 3 As shown, the gate-sensitive trigger unidirectional thyristor chip of the present invention includes an N+ emitter region 101, a cathode electrode K201, a gate electrode G202, a P-type connection hole 203, a trench 501, a pair isolation diffusion region 601 and a P-type short The base region 602, the cathode electrode K201 is located on the top surface of the N+ emitter region 101, the N+ emitter region 101 is located on the top surface of the P-type short base region 602, the groove 501 is an annular groove opened around the top surface of the chip, and the gate electrode G202 Set on one side of the top of the P-type short base region 602, the P-type connection hole 203 is set on the other side of the top of the P-type short base region 602 corresponding to the gate electrode G202, on the entire bottom surface of the chip and the front, rear, left, and The four facades on the right all have connected isolation diffusion regions 601, and a surfac...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof. In the gate pole sensitive triggering unidirectional thyristor chip, a surface thin film resistor stripe is connected between a P type connection hole and an N+ emitting region. The preparation method of the gate pole sensitive triggering unidirectional thyristor chip adds steps ofLPCVD polysilicon thin film deposition, ion injection polysilicon doping, photoetching thin film resistor stripe, LPCVD oxide layer protection and ion injection doping and annealing between the stepof diffusing the N+ emitting region and the step of photoetching groove window. Advantages of the invention lie in: a resistor is added between the gate pole electrode G and cathode electrode K of thethyristor, which may save a resistor during use and reduces influence of temperature to product electrical parameters. The invention can be used in a scale of temperature at -40 DEG C to 110 DEG C. Controllability and consistency of triggering current are great. Scale of I[GT] among batches can be controlled within 20 microamperes. The invention has strong capacity of resisting disturbance and gate pole sensitivity.
Description
technical field [0001] The invention relates to a chip, in particular to a gate sensitive trigger one-way thyristor chip and a manufacturing method thereof. Background technique [0002] At present, when the gate sensitive trigger one-way thyristor chip is in use, I GT Dispersion is large, unable to meet customer requirements. The impact of the use environment and the power consumption of the device itself will cause the temperature of the device case to rise, the gate sensitivity will increase with the temperature, and the trigger current I GT becomes smaller, causing false triggers. Similarly, at low temperature, the case temperature of the device drops, the gate sensitivity decreases with temperature, and the trigger current I GT becomes larger, causing the device to fail to conduct at the rated current of the circuit design. Contents of the invention [0003] The object of the present invention is to provide a gate sensitive trigger one-way thyristor chip. [0004...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/744H01L21/82H01L21/205H01L21/265H01L21/306
Inventor 颜呈祥王成森黎重林薛治祥黄健
Owner JIANGSU JIEJIE MICROELECTRONICS