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Method of operating a chemical vapor deposition chamber

A chemical vapor deposition and stabilization technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as wasting time, affecting the efficiency of chemical vapor deposition steps, and complexity

Active Publication Date: 2011-12-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is a complicated and time-consuming work to send the test piece into and out of the chemical vapor deposition chamber through the wafer transfer device, vacuumize and break the vacuum, deposit the material layer and measure the deposition thickness of the material layer, and greatly affect Efficiency of the chemical vapor deposition step

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  • Method of operating a chemical vapor deposition chamber
  • Method of operating a chemical vapor deposition chamber

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Embodiment Construction

[0017] The present invention provides a novel method of operating a chemical vapor deposition chamber. The advantage is that after the cleaning step of the chemical vapor deposition chamber, a stabilization step is performed on the digital liquid flow controller, so that the precursor fluid can be substantially stably introduced into the chemical vapor deposition chamber. The resulting material layer is then deposited using a chemical vapor deposition chamber, resulting in a uniform thickness due to the steady flow of the precursor fluid. The method of the invention is simple and fast, and can greatly improve the efficiency of the chemical vapor deposition step.

[0018] Figure 1 illustrates a preferred embodiment of the method of the present invention for operating a chemical vapor deposition chamber. First, a chemical vapor deposition system 100 is provided. The chemical vapor deposition system 100 includes a chemical vapor deposition chamber 110 , a precursor introduction...

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Abstract

The present invention discloses a method of operating a chemical vapor deposition chamber. First, a digital liquid flow controller is provided to control the introduction of precursor fluid into the chemical vapor deposition chamber. Next, a pre-cleaning step is performed on the chemical vapor deposition chamber. Afterwards, a stabilization step is performed on the digital liquid flow controller, so that the precursor fluid can be substantially stably introduced into the chemical vapor deposition chamber. Next, a chemical vapor deposition step is performed using a chemical vapor deposition chamber.

Description

technical field [0001] The present invention relates to a method of operating a chemical vapor deposition chamber. In particular, the present invention relates to a method of operating a precursor fluid that is substantially stably introduced into a chemical vapor deposition chamber. Background technique [0002] The chemical vapor deposition method plays an important role in the semiconductor process. Chemical vapor deposition can achieve various specific materials to establish and grow a solid film on the wafer, such as polysilicon layer, interlayer dielectric layer (ILD), intermetal dielectric layer (IMD), shallow trench isolation (STI) , and passivation, etc., the film thickness ranges from less than 0.5 microns to several microns, and with appropriate yellow light, etching and other processes, the desired components or material layers can be successfully established on the wafer superior. [0003] A general chemical vapor deposition system usually includes several pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/52
Inventor 赖建兴曾姿锦张英毅
Owner UNITED MICROELECTRONICS CORP
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