Storage system with data-restoring function and data-restoring method thereof

Abstract

The invention provides a storage system with a data-repairing function and a data-repairing method thereof. A testing and repairing flow is mainly utilized to perform once or for many times to reduce errors in a memory medium to a repairable range of the generally used error checking and correcting (ECC) function so as to ensure the reading correctness of data and effectively improve the reliability of the data. An optimal mode of the data-repairing step comprises the following steps: utilizing a test data generator in the storage system to provide test data, writing the test data to a memoryblock with data errors; finding error positions by reading the test data; and positioning the error positions in the repairable range of the ECC technology by a repairing program. However, the memoryblock is marked as a damaged block if the error positions can not be found or the errors can not be repaired in the repairable range of the ECC technology when a test number exceeds a test upper limit.

Description

technical field [0001] The invention relates to a storage system with data repair function and a data repair method thereof, in particular to memory detection and data correction by writing one or more test data to a location where error data is stored. Background technique [0002] Due to its advantages over traditional hard disks, such as fast access speed, low power consumption, small size, and shock resistance, flash memory is gradually and widely used in information storage devices. [0003] Due to the structural relationship of the flash memory, the stored data is easily affected by high voltage interference or the aging and damage of the memory cells, resulting in errors in the stored data. For example, the state of the original memory cell is high potential, but the controller reads the memory cell. When the controller reads the memory cell, it reads that the memory cell is in a low potential state; or when the controller reads the memory cell, it reads that the memo...

AI Technical Summary

Problems solved by technology

[0009] However, in the technology proposed by the above prior art, if the error bit exceeds the range that can be corrected by ECC, data reading error will still occur.

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