Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for cleaning graphitic silicon materials

A silicon material and graphite technology, which is applied in the field of impurity removal of graphite-containing polysilicon raw materials, can solve the problems of increasing waste rate, reducing conversion efficiency, and reducing minority carrier life, and achieves the effects of increasing success rate, reducing loss, and simple operation

Inactive Publication Date: 2010-01-13
HEFEI JINGKUN NEW ENERGY
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As far as the growth of solar silicon single crystal is concerned, the introduction of a large number of dislocations will reduce the minority carrier lifetime and reduce the conversion efficiency; in addition, during the slicing process, the existence of a large number of dislocations will greatly increase the waste rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cleaning graphitic silicon materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Such as figure 1 . The cleaning method of graphite-containing silicon material, the steps are:

[0026] (1) Grinding graphite-containing silicon material polycrystals into particles with a particle size less than 1 cm;

[0027] (2) A certain amount of pulverized particles are evenly put into the alkali tank;

[0028] (3) Add an appropriate amount of sodium hydroxide into the alkali tank, and stir with a stirring rod, and slowly add a little pure water during the stirring process, and the silicon material and sodium hydroxide will react chemically;

[0029] (4) After the chemical reaction is fully carried out, use pure water to rinse the residue after the reaction multiple times, and measure the pH value of the rinsed liquid at the same time, until the measured pH value of the rinsed liquid is about 7 during the rinsing process until;

[0030] (5) drop into the mixed solution of hydrofluoric acid, the vitriol oil in the residuum after rinsing, residuum and hydrofluor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of recovering silicon materials and removing impurities, in particular to a method for removing impurities of graphitic polysilicon materials growing in a reducing furnace. The invention aims to provide a method for cleaning graphitic silicon materials and has goals of conveniently removing graphitic impurities in the silicon materials and having less silicon wastage. The method for cleaning graphitic silicon materials has simple operation, can effectively remove graphite in the silicon materials, reduce the loss of the silicon materials and greatly increase the success ratio for growing single crystals by using a czochralski method.

Description

technical field [0001] The invention relates to the technical field of silicon material recovery and impurity removal, in particular to a method for removing impurities from graphite-containing polysilicon raw materials grown in a reduction furnace. Background technique [0002] With the proposal of the sustainable development strategy, it is particularly important to save energy, reduce emissions and improve the utilization of renewable resources. Under such a large social development background, the solar photovoltaic industry has encountered an unprecedented opportunity. The development of the solar energy industry will greatly increase the demand for silicon materials, so the recycling and reuse of waste silicon materials and the purification of silicon raw materials are very important. [0003] The Czochralski method is a high-efficiency, easy-to-manipulate, and most widely used single crystal growth method. During the growth of single crystal by Czochralski method, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B08B3/08
Inventor 刘天贵马青李春雷高熙礼
Owner HEFEI JINGKUN NEW ENERGY