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Method for preparing nitride self-supported substrate

A technology of self-supporting substrates and nitrides, which is applied in the direction of manufacturing tools, welding equipment, laser welding equipment, etc., can solve the problems of complex process of nitride substrates and the inability to give full play to the superior performance of nitride semiconductor materials

Inactive Publication Date: 2011-10-26
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

It is used to solve the problem in the prior art that the preparation process of the nitride substrate is complicated and the superior performance of the nitride semiconductor material cannot be fully utilized

Method used

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  • Method for preparing nitride self-supported substrate
  • Method for preparing nitride self-supported substrate
  • Method for preparing nitride self-supported substrate

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Embodiment Construction

[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] During the growth process of the nitride film, due to the poor lattice matching between the substrate and the film material, when it grows to a certain thickness, the film will be bent due to the influence of the bottom pressure and the top tension, and at the same time, the stress cannot be released. Cracks appear in the film. It has troubled the subsequent processes such as stripping and polishing. In order to solve the above problems, this embodiment adopts the following technical solutions: two-step growth of nitride is adopted, the first step is to grow a thin nitride layer on the initial substrate, and then the substrate is taken out of the single crystal furnace, and the substra...

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Abstract

The invention discloses a method for preparing nitride self-supported substrate, comprising the steps of: generating nitride membrane by putting foreign substrate into a single crystal furnace; etching grooves at the bottom of the foreign substrate with the nitride membrane, wherein the grooves divide the nitride membrane into a plurality of zones; after etching, washing the foreign substrate with the nitride membrane, putting the foreign substrate into the single crystal furnace to continually grow and obtain the subsequently grown nitride membrane; and removing the foreign substrate and polishing the subsequently grown nitride membrane to obtain the stripped nitride self-supported substrate. By laser etching the bottom of the initial foreign substrate with one thin layer of the nitride membrane, the method etches the substrate into a plurality of zones with smaller size, is convenient for releasing a part of stress, relieves the affect of the stress to the growth of the nitride, andgrows a low-camber, no-crack and high-quality nitride thick membrane thereon, thereby being convenient for stripping crystal wafer with large size and obtaining the nitride self-supported substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a nitride self-supporting substrate with low curvature and no cracks. Background technique [0002] Nitride-based semiconductors are very useful optoelectronic materials because they are semiconductor materials with direct bandgap, and the bandgap width can be adjusted from 0.7eV to 6.2eV at room temperature. Nitride series semiconductors include not only gallium nitride, but also AlN, InN, or light-emitting elements formed by overlapping mixed crystal films of gallium nitride, AlN, and InN, but not all general semiconductors containing nitrogen. Nitride series semiconductors have the characteristics of high temperature resistance, corrosion resistance, high saturated electron velocity, and good thermal conductivity. They have a wide range of application backgrounds in the production of electronic devices with high temperature and high power...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/20H01L21/268B23K26/36B23K26/362
Inventor 徐永宽殷海丰程红娟李强于祥潞杨丹丹赖占平严如岳
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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