Image sensor and manufacturing method thereof

Abstract

An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration ofa stepped portion between two areas, where the first and the second group of micro lenses are formed, over a planarization layer below these two areas. Thus, a zero gap is realized, where no gap between micro lenses exists, and the fill factor of micro lens is maximized. By the realization of the zero gap, interference effects decrease, noise decreases, and fill factor increases, and thus the sensitivity of an image sensor increases, especially the green sensitivity.

Description

technical field [0001] The present invention relates to an image sensor and a manufacturing method thereof, and more particularly, to an image sensor having adjacent microlenses having different surface properties and a manufacturing method thereof. Background technique [0002] An image sensor is a semiconductor device that converts an optical image into an electrical signal. Types of image sensors include CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors. [0003] A CMOS image sensor is a device that converts an optical image into an electrical signal using CMOS manufacturing technology. CMOS sensors employ a switching method that makes as many MOS transistors as there are pixels and uses them to sequentially detect output. CMOS image sensors are easier to handle than CCD image sensors, have a flexible scanning method, and reduce the size of final products by integrating image detection and signal processing circui...

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Problems solved by technology

However, since the photodetector can only be formed in an area outside the logic circuit, the area used as the logic circuit limits the area of ​​the photodetector

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