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Photoelectric element

A technology of photoelectric components and light-emitting layers, applied in electrical components, circuits, optics, etc., can solve problems such as difficulty in improving the luminous efficiency of light-emitting diodes

Active Publication Date: 2010-03-10
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the multiple quantum well structure layer is easily affected by carrier overflow and piezoelectric field effect, making it difficult for electrons and holes to be effectively confined in the multiple quantum well structure for combination, thus making it difficult to improve the luminous efficiency of light-emitting diodes

Method used

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Embodiment Construction

[0035] figure 1 Shown is the first embodiment of the present invention, a photoelectric element structure with multiple quantum well light-emitting layers. The photoelectric element 10 is a light-emitting diode structure, which includes a p-type cladding layer 12, an n-type cladding layer 16, a light-emitting layer 14 located between the p-type cladding layer 12 and the n-type cladding layer 16, and a second layer above the p-type cladding layer 12. A contact electrode 11 and a second contact electrode 17 in contact with the n-type cladding layer 16 . Wherein the light-emitting layer 14 is a multiple quantum well structure formed by stacking multiple well layers 142 and multiple barrier layers 144 alternately, and in the barrier layer in the light-emitting layer 14 closest to the p-type cladding layer 12, doping can change The impurity of the barrier is used to form the barrier modulation layer 143 . When a driving current is applied to the two contact electrodes 11 and 17 ,...

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Abstract

The invention provides a photoelectric element, which comprises an n-type covering layer, a p-type covering layer and a luminous layer, wherein the luminous layer is positioned between the n-type covering layer and the p-type covering layer. The luminous layer has a multi-quantum well structure which is formed by alternately stacking a plurality of potential barrier layers and a plurality of welllayers, wherein the potential barrier layer closest to the p-type covering layer is doped with impurities capable of changing the potential barrier of the potential barrier layer to form a potential barrier modulation layer. The photoelectric element has the advantage of improving the luminous efficiency.

Description

technical field [0001] The invention relates to a photoelectric element, in particular to a light-emitting diode element with a multiple quantum well structure. Background technique [0002] Light Emitting Diode (LED) has been widely used in automobiles, computers, communications and consumer electronics due to its small size, long life, low driving voltage, low power consumption, fast response, and good shock resistance. products etc. [0003] Generally speaking, a light-emitting diode has an active layer sandwiched by two cladding layers (p-type & n-type cladding layers) of different electrical properties. When a driving current is applied to the contact electrodes above the two covering layers, the electrons and holes in the two covering layers will inject into the light-emitting layer, combine in the light-emitting layer and emit light. The light is omnidirectional and will be emitted from the light-emitting diode element. all surfaces. Generally, the light emitting l...

Claims

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Application Information

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IPC IPC(8): H01L33/00G02F1/13357H05B37/00
Inventor 朱瑞溢郭政达许育宾王俊凯吴欣显林义杰
Owner EPISTAR CORP
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