Device and method for detecting characteristics of pulse type semiconductor laser

Abstract

The invention discloses a device and method for detecting characteristics of pulse type semiconductor laser, which relates to the technical fields of precise instruments and testing and solves the problem that the environment of a laser to be detected has vapor as the existing detector with the characteristics of a semiconductor laser has a large amount of heat accumulation. The current signal output by a current signal output end of a hardware control circuit in the detector of the invention is a pulse type current signal, and the step a of the pulse type current signal is 0.1 mA; the pulse width b of the pulse type current signal is larger than or equal to 100 ns, and is less than or equal to 20 mu s; the pulse period c of the pulse type current signal is larger than or equal to 200 ns,and is less than or equal to 20 ms; the pulse amplitude d of the pulse type current signal is larger than or equal to 0 mA, and is less than or equal to 500 mA. The detector also comprises a nitrogensource, and nitrogen is charged in the environment of the laser to be detected in the process of detection so as to test the laser to be detected in the nitrogen environment and further to avoid the generation of water vapor effectively.

Description

technical field [0001] The invention relates to the technical field of precision instruments and detection. Background technique [0002] At present, the detection method adopted by the semiconductor laser characteristic parameter detection devices developed by many domestic and foreign manufacturers is mainly the continuous injection method. Semiconductor lasers work by direct injection of carriers. Due to their high operating current density, heat will be generated in the active area of ​​the device while the laser is output, causing temperature rise. The performance of semiconductor lasers is extremely sensitive to changes in temperature. An increase in the temperature of the active region will directly lead to a decrease in the gain coefficient and radiation efficiency, which will change the carrier distribution in the semiconductor, the electrical characteristics of the device and the spectral characteristics of the output, causing the mode to change. unstable. If the...

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Problems solved by technology

[0004] In order to solve the problem that there may be water vapor in the environment where the measured laser is located due to the large amount of heat accumulated in the existing semiconductor laser characteristic detection device, the present invention provides a laser fixture and a pulsed semiconductor laser characteristic detection device and detection method including the laser fixture

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