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Wafer supporting glass

A wafer and glass technology, applied in the field of wafer support glass, can solve the problems of inability to be used as wafer support glass, and achieve the effects of reducing defective products and improving impact resistance

Active Publication Date: 2010-03-24
HOYA CANDEO OPTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chips or cracks occur at the edges due to these impacts, making it impossible to use as a wafer support glass

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0055]

[0056] As described above, by bending the glass plate GP by 30° or more, the glass plate GP can be peeled from the semiconductor wafer SW having the double-sided adhesive film AD without damaging the semiconductor circuit of the semiconductor wafer SW. That is, it is necessary to prepare a glass plate GP that does not crack even when bent by 30° or more. In addition, since the edge portion of the glass plate GP does not come into contact or impact in order to prevent the semiconductor wafer from coming into contact with the wall surface of the stocker or the positioning pins, the edge portion needs to have impact resistance.

[0057] "Glass Substrate"

[0058] Three types of glass substrates were prepared. They were respectively named No. 1 glass, No. 2 glass, and No. 3 glass, and their respective compositions are shown in Table 1. The raw materials used are oxides, carbonates, nitrates and hydroxides.

[0059] (Table 1)

[0060] weight%

SiO 2

...

Embodiment 1

[0072] [Glass Plate GP of Example 1]

[0073] The glass plate GP of Example 1 was produced as follows: First, the glass base material of No. 1 glass was slowly cooled, and then, the shape processing, end surface grinding processing, upper and lower surface grinding processing, end surface grinding processing, and upper and lower surface grinding processing were performed to form A glass-shaped processed object with an outer diameter of 201 mm and a plate thickness of 0.5 mm was manufactured from this. Next, the glass shape processed product was kept at 380°C in KNO 3 (Potassium nitrate): NaNO 3 (Sodium nitrate) = 60%: 40% mixed salt treatment bath immersed for 3 hours. As a result, the Li ions and Na ions on the surface of the glass-shaped processed product are ion-exchanged with the Na ions and K ions in the treatment bath, respectively, and the glass plate GP of Example 1 in which the surface of the glass-shaped processed product is chemically strengthened is obtained. . ...

Embodiment 2

[0074] [Glass Plate GP of Example 2]

[0075] In the same manner as in Example 1, the glass plate GP of Example 2 was produced by slowly cooling the glass base material of No. 1 glass, and then performing contour processing, end surface grinding, upper and lower surface grinding, end surface grinding, and upper and lower surfaces grinding. Processing was performed to form a glass-shaped processed object with an outer diameter of 201 mm and a plate thickness of 0.5 mm, thereby manufacturing it. Next, the glass shape processed product was kept at 380°C in KNO 3 : NaNO 3 =60%: 40% immersion in the treatment bath of mixed salt for 42 hours. That is, the immersion time was extended compared with Example 1, and two kinds of ion exchanges were performed as much as possible, and the glass plate GP of Example 2 was obtained.

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PUM

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Abstract

The invention provides a wafer supporting glass consisting of a glass plate (GP) exhibiting flexibility so that it can support a semiconductor wafer (SW) by bonding thereto and can be stripped therefrom. The glass plate (GP) is a wafer supporting glass for supporting a semiconductor wafer (SW) by bonding thereto. In order to strip the wafer supporting glass bonded to the semiconductor wafer (SW),the wafer supporting glass bends by a predetermined angle or more. When the wafer supporting glass bends 30 degrees or more, it can be stripped without applying a large force to the semiconductor wafer.

Description

technical field [0001] The present invention relates to a wafer supporting glass that supports a semiconductor wafer by bonding and is easily peeled off from the semiconductor wafer. In addition, the present invention also relates to a wafer supporting glass whose edge portion has impact resistance without chipping or cracking due to force applied to the edge portion. Background technique [0002] In recent years, along with the high performance of electronic equipment such as mobile phones and IC cards, thinning or miniaturization of semiconductor elements (LSI, IC, etc.) mounted inside them has been progressing. In addition, in order to increase the storage capacity without narrowing the line width, three-dimensionally mounted semiconductor devices, such as SD cards, etc., in which multiple layers of semiconductor wafers are stacked, are increasing. [0003] In particular, in terms of thinning, for three-dimensionally mounted semiconductor elements, the development of sem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/683
Inventor 西井由和
Owner HOYA CANDEO OPTRONICS
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