Heating device for metallorganic chemical deposition equipment

Abstract

The invention discloses a heating device for metallorganic chemical deposition equipment, which comprises: at least two sections of furnace wires which are arranged on the same heating plane and are connected to respective electrodes; a thermo detector which is arranged below the at least two sections of furnace wires and close to the heating plane and is used for detecting the heating temperatures of the two sections of furnace wires; and a temperature controller which, according to the temperatures detected by the thermo detector, controls the heating powers applied to the sections of furnace wire to control the heating temperatures of the at least two sections of furnace wires respectively so as to homogenize the heating temperatures of the at least two sections of furnace wires. In the heating device for the metallorganic chemical deposition equipment, multi-section furnace wire heating is adopted, the independent control of the heating power of each section of furnace wire and / or the design of the shape and size of the furnace realize homogeneous and controllable large-area heating temperatures, so the quality of an epitaxial material is improved. In addition, a cold water electrode and a heater shield are adopted to further improve heating stability and safety.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a heating device for metal organic compound chemical deposition equipment. Background technique [0002] Metal organic chemical vapor deposition (MOCVD) equipment is used to grow thin film materials, which is to pass II or III group metal organic compounds and VI or V group element hydrides into the reaction chamber, and the mixed gas flows through the heated substrate surface. A series of chemical reactions, and epitaxial growth into compound single crystal thin film. [0003] The reaction chamber is the core part of the entire MOCVD equipment, which determines the performance of the entire equipment. The chamber heating system is an important factor affecting the quality of thin film deposition. The uniformity of heating and the control of the heating and cooling rate directly affect the uniformity of material epitaxy and the steepness of the grow...

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Problems solved by technology

However, because the coil shape and placement position are very important, the structural design is complicated, and it is not easy to obtain a uniform heating temperature, which often causes the temperature difference in the substrate to reach more than 10°C; in addition, the principle of induction heating requires that the foil should be a conductor such as graphite. manufactured, limiting the options for foiling

The second method is the resistance heating method, which has a simple structure and is easy to control, but the conventional resistance heating will also cause uneven temperature on the substrate due to local heat accumulation.

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