Chip packaging structure and manufacture method thereof

Abstract

The invention relates to a chip packaging structure which comprises a base plate, at least one chip, a heat radiating element, at least one first conducting post, a packaging colloid and at least one second conducting post, wherein the base plate is provided with a first surface and a second surface which are opposite to each other; the chip is configured on the first surface of the base plate; the heat radiating element is configured on the second surface of the base plate; each first conducting post has two opposite end surfaces, one end surface is configured on the first surface of the base plate and electrically connected with the base plate, and the other end surface extends to the direction far away from the base plate; a fixed groove is arranged between the two end surfaces and penetrates through the other end surface; the packaging colloid coats the base plate, the chips, part of heat radiating element and the first conducting posts and has two opposite surfaces, and one surface is exposed out of the surface of the heat radiating element, which is far away from the base plate; each second conducting post is arranged on the other surface of the packaging colloid and comprises a conductive pin part and a lug boss, and the lug boss of each second conducting post is fixed in a fixed groove of each first conducting post.

Description

technical field [0001] The present invention relates to a chip packaging structure and a manufacturing method thereof, and in particular to a chip packaging structure with high voltage protection and a manufacturing method thereof. Background technique [0002] When designing a chip package structure that requires high voltage input (such as a power module that controls the power supply or an IGBT module that controls the motor drive), in order to comply with safety standards (such as: UL Standard) and ensure the normal operation of the package structure, It is usually necessary to consider the creepage distance and clearance distance between the voltage input end of the package structure (such as a lead) and the metal material (such as a heat sink) to avoid a gap between the lead and the heat sink. Conduction leads to an electrical short circuit, and prevents the instantaneous high voltage input from the lead pin from jumping directly to the low voltage end (that is, the he...

AI Technical Summary

Problems solved by technology

In order to make the substrate 110 have a sufficient carrying area, it is necessary to increase the size of the substrate 110, which will lead to an increase in the cost of the substrate 110 and an increase in the volume of the package structure 100.

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