Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical vapor deposition system

A technology of chemical vapor deposition and air intake device, which is applied in the field of chemical vapor deposition system, can solve the problems of chemical pollution and particle pollution, complex reaction mechanism, difficult to control, etc., and achieve the effect of fast reaction rate, reduced gas phase reaction and uniform concentration

Inactive Publication Date: 2010-06-30
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its reaction mechanism is complex, difficult to control, and prone to chemical pollution and particle pollution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition system
  • Chemical vapor deposition system
  • Chemical vapor deposition system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The chemical vapor deposition system of the technical solution will be further described in detail below in conjunction with the accompanying drawings and multiple embodiments.

[0018] see figure 1 The chemical vapor deposition system 100 provided in the first embodiment of the technical solution includes an air inlet device 10 , an air extraction device 20 and a reactor 30 connected between the air inlet device 10 and the air extraction device 20 .

[0019] The gas inlet device 10 is connected to one end of the reactor 30 to provide reaction gas to the reactor 30 . The intake device 10 includes a first intake duct 11 , a second intake duct 12 , a gas mixing chamber 13 and a main intake duct 14 .

[0020] The first gas inlet pipe 11 communicates with the gas mixing chamber 13 and is used for transporting the vaporized precursor to the gas mixing chamber 13 . The second gas inlet pipe 12 is also in communication with the gas mixing chamber 13 for delivering auxiliary ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chemical vapor deposition system which comprises an air inlet device, an air pumping device and a reactor, wherein the reactor is connected between the air inlet device and the air pumping device; a carrier for containing a base is arranged in the reactor; a plurality of clapboards are arranged in the reactor between the air inlet device and the air pumping device; each clapboard is provided with at least one through hole; and the through holes between two adjacent clapboards are mutually staggered.

Description

technical field [0001] The invention relates to surface deposition thin film technology, in particular to a chemical vapor deposition system for surface deposition thin film. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) is a process technology in which reactant substances undergo chemical reactions under gaseous conditions to generate solid substances that are deposited on the surface of a heated solid substrate to obtain solid materials. For details, please refer to Dendritic Platinum Aggregates Produced in the Plasma Assisted Chemical Vapor Deposition of Tin Oxide Thin Films, Volume33, Issue 10, Page(s): 244-245 published by Pulpytel, J. et al. in April, 2005. [0003] The chemical vapor deposition system plays a vital role in the chemical vapor deposition process, which directly affects the uniformity and purity of the deposited film, the consistency of the particle size of the film, and the rate of the deposited ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 裴绍凯
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com