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Semiconductor ceramic material and NTC thermistor

一种陶瓷材料、半导体的技术，应用在热敏电阻器、电阻器、电阻制造等方向，能够解决难以调整、出现裂纹、特性变化等问题

Inactive Publication Date: 2010-06-30
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Therefore, according to the techniques described in Patent Documents 1 to 3, it is not only necessary to prepare at least two kinds of thermistor materials, but also there is a problem that it is difficult to adjust by selecting and combining materials whose resistance changes linearly.
In addition, since it is constructed by bonding ceramic layers composed of at least two kinds of thermistor materials, there may be changes in characteristics due to element diffusion during firing, differences in shrinkage, and differences in linear expansion coefficients. cracks, etc.

Method used

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  • Semiconductor ceramic material and NTC thermistor
  • Semiconductor ceramic material and NTC thermistor
  • Semiconductor ceramic material and NTC thermistor

Examples

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Embodiment Construction

[0024] figure 1 It is a perspective view which shows the appearance of the NTC thermistor 1 which concerns on one Embodiment of this invention.

[0025] The NTC thermistor 1 includes electrodes 11 and 12 , and a ceramic base 20 sandwiched between the electrodes 11 and 12 . The electrodes 11 and 12 are made of Ag, Ag—Pd, Pd, Pt, or Au, or alloys containing these. The ceramic base 20 is composed of the semiconductor ceramic material of the present invention described below.

[0026] in addition, figure 1 Although the NTC thermistor 1 in the shape of a disk is shown in the figure, it may be in the shape of a cuboid, and may also have a laminated structure having internal electrodes.

[0027] The semiconductor ceramic material constituting the ceramic matrix 20 has a negative resistance temperature characteristic, and it includes A containing rare earth elements and barium elements, and B containing manganese elements. x B y o z (wherein, z is determined by the valence of th...

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PUM

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Abstract

Provided is an NTC thermistor having excellent linearity of resistance temperature characteristics by using only one kind of semiconductor ceramic material without depending on combination of two or more kinds of materials. As a semiconductor ceramic material, which constitutes a ceramic element (20) for an NTC thermistor (1) and has a negative resistance temperature characteristic, a material composed of an oxide expressed as (La1-alphaBaalpha)xMnyOz (where, z is a number determined by values of x and y and satisfies the electroneutrality conditions as ceramic). When x=1 and y=0.8 to 1.5, an inequality of 0.60<=alpha<=0.75 is satisfied, and when x=1 and y=1.7 to 2.3, an inequality of 0.50<=alpha<=0.63 is satisfied.

Description

technical field [0001] The present invention relates to a semiconductor ceramic material having a negative resistance temperature characteristic and an NTC thermistor constructed using the same, and particularly relates to an improvement for improving the linearity of the resistance temperature characteristic. Background technique [0002] NTC thermistors have negative resistance temperature characteristics in which the resistance is high at room temperature and the resistance becomes low at high temperatures, and are used for temperature sensors and circuits for temperature compensation, for example. [0003] The negative resistance temperature characteristic of NTC thermistor is generally non-linear. On the other hand, when an NTC thermistor is used in the above-mentioned temperature sensor, temperature compensation circuit, etc., in order to respond well to a small temperature change with good sensitivity, the resistance temperature characteristic is required to be more l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/00C04B35/50H01C7/04
CPCC04B2235/6025H01C17/06533C04B2235/3227H01C7/008C04B2235/3263H01C7/043C04B35/016C04B2235/3215C04B2235/79C04B35/63488
Inventor 三浦忠将
Owner MURATA MFG CO LTD
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