Method for manufacturing capacitor of metal-insulator-metal structure

Abstract

The invention discloses a method for manufacturing a capacitor of a metal-insulator-metal (MIM) structure. The manufacturing method comprises the following steps: firstly, depositing a lower electrode plate; secondly, manufacturing a dielectric layer; and finally, depositing an upper electrode plate. The method for manufacturing the dielectric layer comprises the steps of: depositing a SiO2 layer after depositing a SiN layer. The method provided by the invention has the advantage of improving performance parameters of the MIM capacitor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a metal-insulator-metal capacitor (MIM, Metal-Insulator-Metal). Background technique [0002] Capacitors are widely used in semiconductor integrated circuits as charge storage, coupling and filtering devices. Generally, in order to improve the performance of radio frequency (RF, Radio Frequency) integrated circuits or mixed signal integrated circuits, it is necessary to use large-capacity capacitors. As semiconductor technology enters the 90 nanometer (nm) process node, the feature size of devices in integrated circuits continues to decrease, and high-performance, high-density connections between devices are not only interconnected in a single interconnect layer, but also in multiple layers. interconnection between. Therefore, a large number of connections between devices use a multilayer interconnection structure, in which multipl...

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Problems solved by technology

[0006] However, due to the inherent instability of the bond itself between the Si-N of SiN generated, the performance parameters of the MIM capacitor with the dielectric layer 102 containing SiN will be reduced, such as will affect the voltage capacitance curve (VCC, Voltage capacitor curve ) coefficient and higher leakage current at high voltage, etc.

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