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Polishing composition

A technology of composition and compound, which is applied in the direction of polishing composition containing abrasive, grinding device, grinding machine tool, etc., can solve the problems of not improving the flatness, unable to obtain copper grinding speed, corrosion flatness of metal layer, etc.

Inactive Publication Date: 2010-08-11
NITTA HAAS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Regarding the polishing composition described in JP-A-2007-13059, although it is described that it has a sufficient copper polishing rate, as described in Examples 1 to 3, the copper polishing rate is about 0.210 to 0.260 μm, Less than 1μm / min
In addition, in Comparative Example 4, although hydrogen peroxide was used, the polishing rate did not increase at all.
[0011] As mentioned above, the conventional polishing composition has not been able to obtain a sufficient copper polishing rate, and the flatness has not been improved, so it is desired to have a polishing composition that can realize a higher polishing rate and can improve the flatness at the same time.
[0012] In addition, there will be a state where the surface of the substrate is immersed in the polishing composition during non-polishing, such as before and after polishing, and if the corrosive force of the polishing composition is large, the metal layer may be corroded during such non-polishing, causing the flatness degradation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Ammonia 5% by weight

[0065] Tartaric acid 5% by weight

[0066] C1-14 alkyl naphthalene sulfonic acid Na salt 0.3% by weight

[0067] Hydrogen peroxide 2% by weight

[0068] water remainder

Embodiment 2

[0070] Ammonia 5% by weight

[0071] C1-14 alkyl naphthalene sulfonic acid Na salt 1.0% by weight

[0072] Hydrogen peroxide 2% by weight

[0073] Abrasive grains: colloidal silicon dioxide 3% by weight

[0074] water remainder

Embodiment 3

[0140] Example 3 was obtained in the same manner as in Example 1 except that ammonium chloride was used instead of ammonia (ammonium hydroxide) as the basic compound.

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PUM

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Abstract

Disclosed is a polishing composition which enables to realize a high polishing rate, while improving flatness. Specifically disclosed is a polishing composition suitable for a metal film, particularly for a copper (Cu) film. This polishing composition contains a basic compound containing an ammonium group, an alkylnaphthalene sulfonate, hydrogen peroxide and the balance of water. The pH of the polishing composition is within the range of 8-12. By containing such components, the polishing composition enables to realize a high polishing rate, while improving flatness.

Description

technical field [0001] The present invention relates to a polishing composition for polishing metal films, especially copper films. Background technique [0002] In order to meet the requirements of high integration and miniaturization of semiconductor integrated circuits (LSI), a technology called system-in-package (SIP) has been developed. Multiple semiconductor elements for various functions such as logic functions. As a result, the number of wirings and bumps formed on the substrate increases, and the diameter of each wiring becomes smaller, making it difficult to form fine wiring by conventional build-up methods and mechanical grinding methods. . [0003] Therefore, instead of aluminum, which has been conventionally used as a wiring material, copper, copper alloy, or the like, which has lower electrical resistance than aluminum, has been used. However, since it is difficult for copper to form wiring by dry etching such as aluminum, a wiring formation method called a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14
CPCC09G1/02H01L21/3212
Inventor 松村义之新田浩士
Owner NITTA HAAS INC