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Semiconductor device with alternating-doping source/drain profile

A technology of alternating doping and semiconductor, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of general products without suitable structure and inconvenience

Active Publication Date: 2012-06-06
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It can be seen that the above-mentioned existing transistors obviously still have inconvenience and defects in structure and use, and need to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general product has no suitable structure to solve the above-mentioned problems. This is obviously the relevant industry. Urgent problem

Method used

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  • Semiconductor device with alternating-doping source/drain profile
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  • Semiconductor device with alternating-doping source/drain profile

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Embodiment Construction

[0053] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation of the semiconductor element with alternately doped source / drain forms according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows.

[0054] The disclosure relates to the formation of an integrated circuit device on a substrate, and more particularly to the fabrication of semiconductor devices (ie, field effect transistor devices) featuring alternating doping patterns. This device can be used to form HVMOS field effect transistors and / or other semiconductor devices. It should be understood that the present invention discloses many different specific embodiments, such as many technical features of the present invention. The specific elements and their arrangement d...

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Abstract

The invention relates to an alternating-doping frofile for a source / drain of a semiconductor device. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.

Description

technical field [0001] The invention relates to an integrated circuit element, in particular to a semiconductor element with alternately doped source / drain regions. Background technique [0002] High-voltage transistors (HVMOS transistors) usually include double-diffused drains (DDD) as characteristic elements (ie, source / drain) of the transistor. The function of the double diffusion drain is to prevent electrostatic discharge (ESD) and / or reduce hot electron carrier effect. [0003] However, conventional double diffused drains have the disadvantage of requiring high doses of impurities (ie, dopants). This may cause gate induced drain leakage (GIDL) in the double diffused metal oxide semiconductor (DDD MOS), especially when the length of the gate is shortened. The GIDL current originates from the source region of the transistor overlying the gate electrode. The high electric field induced between the gate (which can be grounded) and the source (where a high voltage can be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/08H01L29/36
CPCH01L29/66659H01L29/7835H01L29/0847
Inventor 朱振梁廖浚廷陈斐筠黄宗义
Owner TAIWAN SEMICON MFG CO LTD