Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Velvet manufacturing solution of monocrystalline silicon additive

A technology of texturing liquid and additives, applied in crystal growth, post-processing details, post-processing, etc., can solve problems such as difficult single crystal silicon, and achieve the effect of uniform size, controllable size, and uniform textured pyramid

Inactive Publication Date: 2011-11-09
HANWHA SOLARONE QIDONG
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, sodium silicate is continuously produced during the reaction, and when SiO in the corrosion solution 3 2- When the content is too high, it is difficult to form an ideal anti-reflection texture on the surface of single crystal silicon by alkali etching method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Velvet manufacturing solution of monocrystalline silicon additive
  • Velvet manufacturing solution of monocrystalline silicon additive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] A monocrystalline silicon additive texturing solution, which is composed of an alkaline etching solution, a surfactant, and an organic acid or salt, wherein the amount of the surfactant is equivalent to 0.05% to 0.5% of the mass or volume of the alkaline etching solution (for example, 0.05% , 0.2%, 0.5%), the amount of organic acid or salt is equivalent to 0.1% to 10.0% of the mass or volume of the alkaline corrosion solution (eg 0.1%, 5%, 10%). Described alkaline etchant is by the sodium hydroxide (or potassium hydroxide, sodium carbonate, potash, sodium silicate or sodium phosphate) of 0.2%~5% (for example 0.2%, 2%, 5%) mass percent A corrosive solution composed of one or several kinds) and water.

[0026] Organic acid or salt is one or more of fatty acids containing 4-10 carbons or fatty acid salts containing 4-10 carbons and phenyl fatty acids (such as butyric acid, pentanoic acid, heptanoic acid, tartaric acid or sodium benzoate) ; The surfactant is one or more of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a velvet manufacturing solution of a monocrystalline silicon additive, which comprises an alkaline etching solution, a surface active agent and organic acid or salt, wherein the mass of the surface active agent is 0.05% to 0.5% of the mass or volume of the alkaline etching solution, and the mass of the organic acid or salt is 0.1% to 10.0% of the mass or volume of the alkaline etching solution. The velvet manufacturing solution enables the pyramid size of a velvet surface of monocrystalline silicon to be uniform without blaze or obvious impression. Under a proper temperature condition, the velvet surface is quickly and effectively formed and is matched with traditional production equipment.

Description

Technical field: [0001] The invention relates to a monocrystalline silicon additive texturing liquid. Background technique: [0002] In the alkaline etching process of monocrystalline silicon, the main components of a typical alkaline solution are sodium hydroxide (NaOH), sodium silicate (NaOH) 2 SiO 3 ) or isopropanol (IPA) and H 2 O. At higher temperatures, single crystal silicon in alkaline aqueous solution undergoes the following corrosion reactions: [0003] Si+6OH - ——SiO 3 2- +3H 2 O+4e [0004] 4H + +4e——2H 2 ↑ [0005] The overall reaction equation is: [0006] Si+2OH - +H 2 O = SiO 3 2- +2H 2 ↑ [0007] Due to the difference in the arrangement spacing of silicon atoms in different crystal images of silicon crystals, the etching speed of alkaline solution is also different. Generally speaking, when the concentration and temperature of the alkaline solution are high, the etching speed in the [100] and [111] directions of single crystal silicon is s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C23F1/40
Inventor 杨雷马跃王景霄王玉亭沈专戴燕华
Owner HANWHA SOLARONE QIDONG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com