High voltage semiconductor device

Abstract

This invention describes implementation of medium / high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistance trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. CMOS semiconductor devices, such as transistors, are known. Typically these 5 devices have only limited applicability in high voltage (HV) due to for instance breakdown of voltage. Many IC (Integrated Circuit) applications require for instance power management units for DC:DC down-or up-conversion of the supply voltage. Typically NMOS and PMOS semiconductor devices, such as transistors, with capability from10 V up 10 to 25 V are required for such applications.

Description

Technical field [0001] The present invention describes a method for realizing a medium / high voltage semiconductor device with better voltage blocking capability versus characteristic on-resistance trade-off. This method does not require any additional process steps and can be implemented in baseline and sub-micron CMOS. Background technique [0002] CMOS semiconductor devices such as transistors are known. Typically, due to effects such as voltage breakdown, such devices have only limited applications under high voltage (HV). [0003] Most IC (integrated circuit) applications require power management units for DC:DC up-down conversion of power supplies. Typically, for this application, NMOS and PMOS semiconductor devices such as transistors with the ability to rise from 5V to 25V are required. [0004] In addition, applications such as solid-state lighting, power amplifiers, and MEMS sensor or actuator drive circuits require transistors that can handle voltages up to 50v, and even...

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