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Image sensor device and manufacturing method thereof

A technology of image sensing and manufacturing methods, applied in radiation control devices, electrical components, electric solid devices, etc., can solve the problems of inability to optimize pixel absorption and cannot be widely used, and achieve the best effect of absorption

Active Publication Date: 2010-10-06
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, image sensors cannot be fabricated with current technology to optimize the absorption of radiation by the pixels
Thus, while existing methods of fabricating image sensors are generally adequate for their intended purpose, they cannot be broadly applied in all situations

Method used

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  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof

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Embodiment Construction

[0035] The present invention will next provide many different embodiments for implementing different features of the invention. The composition and configuration of each specific embodiment will be described below in order to simplify the present invention. These are merely examples for simplicity of representation and are not intended to limit the invention. In addition, the formation of a first element "on" a second element may include the direct contact between the first element and the second element in the embodiment, or may also include other additional elements between the first element and the second element The element is such that the first element is not in direct contact with the second element. Various elements may be shown in any different scale for clarity and simplicity of illustration.

[0036] figure 1 Shown is a flowchart of a method 11 for fabricating a back-side illuminated (BSI) image sensor with increased quantum efficiency in accordance with various ...

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Abstract

Provided is an image sensor device and manufacturing method thereof. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index. The invention can optimize the absorption of pixels to the radiation.

Description

technical field [0001] The present invention relates to an image sensing device, in particular to an image sensing device with improved quantum efficiency. Background technique [0002] Semiconductor image sensors can be used to sense light. Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) and charge-coupled devices (CCDs) have been commonly used in various applications, such as those of digital cameras or cell phone cameras. These devices utilize an array of pixels in a substrate, such as photodiodes and transistors, to absorb radiation projected towards the substrate and convert the radiation it senses into an electronic signal. Therefore, the sensing efficiency of an image sensor is determined by how much radiation a pixel can absorb. However, fabricating image sensors with current technology does not optimize the absorption of radiation by the pixels. Thus, while existing methods of fabricating image sensors generally serve their original purpose, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14685H01L31/02165H01L27/1464
Inventor 林政贤杨敦年刘人诚刘汉琦王文德庄俊杰
Owner TAIWAN SEMICON MFG CO LTD