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Nonvolatile semiconductor photorefractive memory structure

A non-volatile, semiconductor technology, applied in the field of medium refractive index, can solve the problems of low efficiency, weak refractive index of optical waveguide, small coupling part, etc., and achieve the effect of high efficiency, energy saving and broad application prospects.

Inactive Publication Date: 2010-11-10
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The prior art close to the structure of the present invention is an optical read-only memory paper published by Cornell University in 2006: C.A.Barrios and M.Lipson, "Silicon Photonic Read-Only Memory," J.of Lightwave Thechnol. 242006 pp2898, in the structure designed in the paper, the floating gate and the optical waveguide are separated, the coupling part of the carrier and light in the floating gate is small, and the efficiency is low; in the structure designed in the paper, the optical waveguide is connected to the electrode at the same time, It is used as an electrode, so the area of ​​the floating gate is limited by the area of ​​the waveguide, and the modulation of the refractive index of the optical waveguide is very weak

Method used

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Embodiment 1

[0028] Embodiment 1 General structure of the present invention

[0029] figure 1 , 2, 3 respectively give the overall structure of the present invention from different angles. In the figure, 100 is an optical waveguide part, 200 is a floating gate part, 1 is a semiconductor optical waveguide, 2 is a floating gate, 3 is a control gate, 4 is an upper insulator medium, 5 is a conductive medium, 6 is an electrode, and 7 is a lower insulator medium.

[0030] The nonvolatile semiconductor photorefractive memory structure of the present invention is composed of an optical waveguide part 100 and a floating gate part 200 . exist figure 1 , 2 In the structure shown in , 3, there are two floating gate parts 200 . Wherein, the optical waveguide part 100 is made up of the semiconductor optical waveguide 1, the upper insulator medium 4 above the semiconductor optical waveguide 1 and the lower insulator medium 7 below the semiconductor optical waveguide 1; the floating gate part 200 is...

Embodiment 2

[0033] Embodiment 2 Different structures of the optical waveguide part 100

[0034] Figure 4 , 5 , 6, and 7 respectively show the optical waveguide part 100 with different structures.

[0035] Figure 4 As shown, the semiconductor optical waveguide 1 is a strip waveguide, the floating gate 2 is in direct contact with the semiconductor optical waveguide 1, and the floating gates 2 in the two floating gate parts are connected together. The upper insulator dielectric 4 and the lower insulator dielectric 7 electrically isolate the semiconductor optical waveguide 1 and the floating gate 2 from other components.

[0036] Figure 5 As shown, the semiconductor optical waveguide 1 is a ridge waveguide, the floating gate 2 is in direct contact with the semiconductor optical waveguide 1 on the ridge of the semiconductor optical waveguide 1, and the rest are the same Figure 4 .

[0037] Figure 6 As shown, the semiconductor optical waveguide 1 is an inverted ridge waveguide, the ...

Embodiment 3

[0040] Embodiment 3 Different structures of the floating gate part 200

[0041] Figure 8 with Figure 9 The structure of each floating gate portion 200 is drawn. The position of each component is that an electrode 6 contacts the control grid 3, the floating grid 2 is below it, and the conductive medium 5 is below it, and the conductive medium 5 is in contact with another electrode 6; the floating grid 2, the control grid 3 and the conductive medium 5 The insulator medium 4 is electrically isolated.

[0042] Figure 8 and Figure 9 The only difference is that the conductive medium 5 is only in its own floating gate part 200 (such as Figure 8 shown) and the conductive medium 5 is extended to the outside of the floating gate part 200 of itself (as Figure 9 (shown at the left end of the middle conductive medium 5 ), can be integrated with another conductive medium 5 and electrically isolated from the semiconductor optical waveguide 1 .

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Abstract

The invention belongs to the technical field of semiconductor electric devices. The structure comprises an optical waveguide part (100) and a floating gate part (200), wherein the optical waveguide part comprises a semiconductor optical waveguide (1), an upper insulator medium (4) and a lower insulator medium (7); the floating gate part (200) comprises floating gates (2), control gates (3), conducting mediums (5) and binate electrodes (6); the floating gates (2) are arranged between the control gates (3) and the conducting mediums (5), and are isolated by the upper insulator medium (4); and the floating gates (2) are contacted with the semiconductor optical waveguide (1). In the invention, the semiconductor optical waveguide has the function of charge storage memory of the floating gates; meanwhile, charge has modulating action on the index of refraction of the optical waveguide. When the invention is applied to an optical switch, pulse energy is additionally added for control only when the state of the optical switch is changed, and a lot of energy is saved. When the invention is applied to a photonic micro-cavity, resonance condition in the micro-cavity has memorability.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to the medium refractive index in integrated optical devices. Background technique: [0002] With the rapid popularization of optical communication network technology, the energy consumption for optical switching and optical transmission is also increasing, so people's demand for low energy consumption devices in optical networks is becoming more and more urgent. The optical switching system composed of optical switches is a key part of the optical network. It provides an optical link for optical signals to be transmitted from a certain entrance to a certain exit. During the period between when an optical link is established and before it is changed, the status of the optical link does not change, but the voltage (or current) controlling each optical switch must always be working to keep the optical link open. If we can allow each optical switch to ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L29/792H01L29/51H10B69/00
Inventor 宋俊峰卢国强
Owner JILIN UNIV
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