Light trap adopted epitaxial material structure of ultrafine divergent angle high-power semiconductor laser

Abstract

The invention relates to a light trap adopted epitaxial material structure of an ultrafine divergent angle high-power semiconductor laser, which comprises a substrate, a buffer layer, an N-type lower limiting layer, a lower gradient light trap layer, an upper gradient light trap layer, an N-type upper limiting layer, an N-type gradient waveguide layer, a quantum well active area, a P-type gradient waveguide layer, a P-type limiting layer and an electrode contact layer, wherein the substrate is used for carrying out the epitaxial growth of all layers of materials of a laser; the buffer layer is prepared on the GaAs substrate; the N-type lower limiting layer is prepared on the buffer layer; the lower gradient light trap layer is prepared on the N-type lower limiting layer; the upper gradient light trap layer is prepared on the lower gradient light trap layer; the N-type upper limiting layer is prepared on the lower gradient light trap layer; the N-type gradient waveguide layer is prepared on the N-type lower limiting layer; the quantum well active area is prepared on the N-type gradient waveguide layer; the P-type gradient waveguide layer is prepared on the quantum well active area; the P-type limiting layer is prepared on the P-type gradient waveguide layer; and the electrode contact layer is prepared on the P-type limiting layer.

Description

technical field [0001] The invention relates to an epitaxial material structure of a high-power semiconductor laser, in particular to an epitaxial material structure of a high-power semiconductor laser with a wavelength of 885nm that can improve the pumping efficiency of an all-solid-state laser and has a very low beam vertical divergence angle. Background technique [0002] High-power semiconductor lasers have the advantages of high electro-optical efficiency, small size, light weight and long life, so they have important applications in the fields of industry, military, aviation, medical treatment and space communication. Especially in recent years, high-power semiconductor lasers with a wavelength range of 800nm-980nm and their arrays have become necessary pumping sources for high-energy solid-state lasers and fiber lasers. [0003] For all-solid-state lasers, the main limitation of high power and high beam quality comes from the huge useless heat generated during the pum...

AI Technical Summary

Problems solved by technology

At present, the far-field vertical divergence angle and parallel divergence angle of ordinary waveguide structure high-power semiconductor lasers are too different, and the typical value is 40° (vertical divergence angle, θ ⊥ )×10°(parallel divergence angle, θ / / ), so the symmetry of the device spot is extremely poor, which is not conducive to the efficient coupling of the laser beam and the pumped device

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