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Capacitor and metal-oxide-metal capacitor

A technology of metal capacitors and oxides, applied in capacitors, circuits, electrical components, etc., to achieve good electrical performance, reduce circuit layout, and save chip area

Active Publication Date: 2012-05-02
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the exemplary MOM capacitors above are two-terminal MOM capacitors

Method used

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  • Capacitor and metal-oxide-metal capacitor
  • Capacitor and metal-oxide-metal capacitor
  • Capacitor and metal-oxide-metal capacitor

Examples

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Embodiment Construction

[0021] A detailed description of embodiments of the present invention and its accompanying drawings are provided below, wherein like reference numerals refer to like elements and the illustrated structures are not necessarily drawn to scale. The term "horizontal" as used herein is defined as a plane parallel to a conventional principal plane or surface of a semiconductor chip or chip substrate, regardless of its orientation. The term "vertical" refers to a direction perpendicular to the previously defined "horizontal". Terms such as "upper", "lower", "bottom", "upper", "side" (in side walls), "higher", "lower", "above" and "below" all refer to "horizontal" And define. The term "approximately" used herein means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. For example, "approximate alignment" refers to a placement method acceptable to technicians with a c...

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Abstract

The invention provides a capacitor and metal-oxide-metal (MOM) capacitor. The MOM capacitor includes a first vertical metal plate, connected to a first terminal; a second vertical metal plate in close proximity to the first vertical metal plate, and connected to a second terminal; a third vertical metal plate in close proximity to the first vertical metal plate, and the third vertical metal platebeing located at the side of the first vertical metal plate opposite to the second vertical metal plate; and at least one oxide layer interposed between the first, second and third vertical metal plates. The inventive improved MOM capacitor is more area efficient, reduces the circuit plane layout and has better electrical performance.

Description

technical field [0001] The present invention relates to semiconductor capacitors, and more particularly, to compact three-terminal or multi-terminal metal-oxide-metal (MOM) capacitors. Background technique [0002] Passive components such as capacitors are widely used in integrated circuit design for radio frequency and mixed signal applications such as bypassing, interstage coupling and in resonant circuits and filters. One of the most commonly used capacitors is the MOM capacitor. [0003] figure 1 A schematic diagram of a demonstration MOM capacitor. Such as figure 1 As shown, MOM capacitor 10 includes interdigitated multi-fingers 12 and 14 formed in multiple metal layers. In a vertical back end of line (BEOL) stack separated by inter-metal dielectrics, interdigitated multi-finger strips can optionally be connected by vias 16 and 18 connections. The manufacturing process of the MOM capacitor can be combined with the connection process, therefore, no additional photo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/92H01L29/41H01L27/02H01L23/528
CPCH01L23/5223H01L28/86H01L28/90H01L2924/0002H01L2924/00
Inventor 林哲煜
Owner MEDIATEK INC