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Stress control method of lithium niobate crystal after chemically mechanical polishing

A technology of crystal chemistry and mechanical polishing, applied in chemical instruments and methods, cleaning methods using liquids, cleaning methods and appliances, etc., can solve problems such as cracking, broken crystals, poor thermal stress, etc.

Inactive Publication Date: 2010-12-15
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problem of cracking and broken crystals easily caused by the thermal stress difference between the surface and the interior of the known lithium niobate crystal after CMP and during the cleaning process.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The polishing liquid flow rate when lithium niobate processing CMP is finished is 200ml / min, so when lithium niobate crystal CMP has just been completed, the initial flow rate of the water throwing cleaning process after CMP is also about 200ml / min, and the water throwing liquid contains 0.8% Oπ -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 7 -H) deionized water; then gradually, evenly, and slowly increase the flow rate of the water-throwing cleaning solution until 5000ml / min, and the water-throwing cleaning process takes 30 seconds. After water polishing, there is no cracking or broken crystals on the surface of lithium niobate crystals, which effectively realizes the stress control of lithium niobate crystals after CMP, and greatly improves the processing yield of lithium niobate crystals.

Embodiment 2

[0020] The polishing fluid flow rate when lithium niobate processing CMP is finished is 300ml / min, so when lithium niobate crystal CMP has just been completed, the initial flow velocity of the water throwing cleaning process after CMP is also about 300ml / min; -10((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 10 -H) deionized water; then gradually, uniformly, and slowly increase the flow rate of the water-throwing cleaning solution until 5000ml / min, and the water-throwing cleaning process takes 3 minutes. After water polishing, there is no cracking or broken crystals on the surface of lithium niobate crystals, which effectively realizes the stress control of lithium niobate crystals after CMP, and greatly improves the processing yield of lithium niobate crystals.

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PUM

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Abstract

The invention relates to a stress control method of a lithium niobate (LiNbO3) crystal surface after chemically mechanical polishing (CMP). In the stress control method of the LiNbO3 crystal after the chemically mechanical polishing, when washing is carried out after CMP is just finished, a manner of gradually and slowly increasing the flow of a water polishing cleaning solution is used to fully release heat stress of the surface of the LiNbO3 crystal so as to reach consistent inner and outer heat stresses of the LiNbO3 crystal, thereby effectively avoiding the problems that cracking and broken crystal easily occurs in the process of cleaning the LiNbO3 crystal, perfectly achieving the stress control of the LiNbO3 crystal after CMP and greatly improving the processing yield of the LiNbO3 crystal owing to the cracking and the broken crystal.

Description

technical field [0001] The invention belongs to a stress control method after CMP, in particular to a stress control method after alkaline polishing of lithium niobate crystals. Background technique [0002] Lithium niobate crystal is an artificial crystal. Because of its ferroelectric, piezoelectric, pyroelectric, electro-optic, acousto-optic and photorefractive effects, it is widely used in the production of various surface acoustic wave, electro-optic and nonlinear optical devices. In recent years, with the improvement of rare earth doping engineering, domain engineering and near-stoichiometric crystal growth and post-processing technology, the LiNbO 3 Waveguide, LiNbO 3 The research on the function and performance of optoelectronic and photonic devices has increased dramatically, making it possible to become an optical silicon material for key components in the fields of optical communication, military confrontation, optical data storage, optical gyroscope, optical rem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/10B08B3/08H01L21/302
Inventor 刘玉岭孙鸣田军
Owner HEBEI UNIV OF TECH
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