Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber

Abstract

The invention discloses a device for controlling the delivery and the uniform distribution of reaction gas in a MOCVD reaction chamber. By respectively controlling the flow of gas passages non-uniformly distributed radially on a front gas homogenizing plate and input passages at different positions, at least two reaction gases are respectively introduced into two paths which are radially and axially crossed on a spray header, and can be secondarily distributed by nozzles in different shapes, so the uniformly distributed boundary layer concentration, speed and temperature required are achievedon the surface of a rotary epitaxial wafer, the quality of massively produced epitaxial films and the finished product ratio of massively produced epitaxial wafers are improved, the consumption of expensive reaction gases can be effectively controlled and the epitaxial production cost is reduced. By properly increasing the distance between the surface of the spray header and the epitaxial wafer, deposits generated on the surface of the spray header and the nozzles in the epitaxial growth are reduced, the cleaning period is prolonged, and the production efficiency and system capacity are improved. The device also can reduce the processing difficulty and manufacturing cost of the nozzles of the spray header and cooling medium passages.

Description

technical field [0001] The invention relates to a device for controlling reaction gas in an MOCVD (metal organic chemical vapor deposition) reaction chamber used to produce compound semiconductor optoelectronic devices, in particular to a MOCVD reaction chamber applicable to large-scale and multi-substrates. Devices for reactant gas delivery and uniform distribution control. Background technique [0002] Metal organic chemical vapor deposition system (hereinafter referred to as MOCVD) is the core equipment used to produce semiconductor optoelectronic devices. In the metal organic chemical vapor deposition (MOCVD) process, the reaction gas is introduced into the reaction chamber from the gas source, so that the epitaxial wafer placed in the reaction chamber is epitaxially grown to form a lattice structure film. [0003] In order to effectively control the high-temperature chemical reaction process of the above-mentioned epitaxial growth, it is usually necessary for the react...

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Problems solved by technology

The shower head 310 passes through several vertical spouts 312, and is also provided with a cooling medium channel 313 horizontally. The sealing of the cooling medium channel 313 depends on the sealing of several corresponding welding points on each nozzle, so the welding The processing requirements are very high, and the manufacturing cost is relatively high

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