Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Calcining processing method and device thereof of single crystal growth thermal system

A calcination treatment and thermal system technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of low efficiency, high cost, poor heating and calcination effect, etc., and achieve energy saving, huge economic benefits and Social benefits, the effect of shortening the calcination cycle

Inactive Publication Date: 2010-12-15
上海卡姆丹克太阳能科技有限公司 +1
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the disadvantages of poor heating and calcining effect, low efficiency and high cost in the prior art of using the existing single crystal furnace for the production and processing of single crystal silicon to calcinate and process new graphite devices and heat preservation device thermal systems , to provide a calcination treatment method and device for a single crystal growth thermal system with high calcination efficiency, good effect, short time, energy saving and low cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Calcining processing method and device thereof of single crystal growth thermal system
  • Calcining processing method and device thereof of single crystal growth thermal system
  • Calcining processing method and device thereof of single crystal growth thermal system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The structure of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] A special calcination furnace for calcination treatment of a single crystal growth heat system is composed of a furnace body, a frame 3, a vacuum pump 10, a controller 13, an electric heater 14 and a lifting mechanism.

[0029] The internal space size of the calcination container is larger than the thermal system of the single crystal furnace including the graphite device and the insulation layer;

[0030] The special calcining container adopts the electric heating method. By lowering and removing the lower furnace cover 1a, the calcined graphite device can be put in and taken out very conveniently. The temperature can reach 2000°C during heating, and it is in a vacuum state, and the vacuum degree in the cold state is less than Equal to 1Pa;

[0031] Adopt technical scheme, first furnace bottom 1c is moved down to the bottom of frame ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a technology in the field of a crystal growth furnace for processing a solar silicon battery. A calcining processing method of a crystal growth furnace thermal system is characterized in that a special calcining container is provided with an openable and closed container door, the size of the internal space of the calcining container is more than that of the appearance size of the single crystal furnace thermal system comprising a graphite element and an insulating layer; the peripheral wall of the inner part of the special calcining container is electrically heated at a temperature of 1600-2000 DEG C, the container is in a vacuum state during the calcining, and the cold vacuum degree is not more than 1Pa; and the single crystal furnace thermal system is integrally or detachably placed in the special calcining container for calcining. The invention correspondingly provides a device for calcining the single crystal thermal system. Therefore, the invention firstly changes the treatment method only for heating and calcining the single crystal furnace thermal system in a single crystal furnace; in addition, the invention also provides the device specially for calcining the single crystal furnace thermal system; and the calcining parts are more flexible, therefore, the calcining effect and the calcining efficiency are improved, and the energy resources are saved.

Description

technical field [0001] The invention relates to the technology in the field of a single crystal growth furnace for processing solar silicon cells, in particular to a calcination treatment method and a calcination treatment device for a heat system in a single crystal growth furnace. Background technique [0002] Silicon single crystal growth needs to be carried out under clean conditions. Many devices in the thermal system of single crystal furnaces are made of graphite, and the graphitization furnace is covered with a large amount of graphite coke on the graphite blank for protection and high temperature treatment. There is no protective gas, and it is carried out under normal pressure, so the devices processed by this graphite contain a lot of ash. In addition, the graphite material must be thoroughly calcined at high temperature due to contamination and moisture in the process of processing and transportation. Only then can it be suitable for crystal growth. [0003] Usu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/00
Inventor 施承启李海波胡如权张永超
Owner 上海卡姆丹克太阳能科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com