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Device capable of realizing spin dynamic storage

A dynamic storage and device technology, applied in static storage, digital storage information, information storage, etc., to achieve the effect of convenient and flexible regulation and increased practicability

Inactive Publication Date: 2011-08-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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But so far no experimental group has combined the advantages of these two technologies

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  • Device capable of realizing spin dynamic storage
  • Device capable of realizing spin dynamic storage
  • Device capable of realizing spin dynamic storage

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Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0023] The device that can realize spin dynamic storage provided by the present invention, such as figure 1 As shown, the entire device structure includes a substrate 10, a buffer layer 20, and a microcavity structure 30 grown sequentially from bottom to top; wherein the active region 32 in the microcavity structure 30 is made of alternately grown gallium nitrogen arsenide 321 and gallium arsenide 322, the logarithm of gallium nitride arsenide 321 and gallium arsenide 322 is 3 to 6 pairs, the absorption layer in the active area is too thin to effectively absorb the incident optical signal, the absorption layer in the active area is too thick, It will affect the response speed of the device, so through trial and error, GaN...

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Abstract

The invention discloses a device capable of realizing spin dynamic storage. The device comprises a substrate (10), a buffer layer (20) and a micro-cavity structure (30) which are sequentially grown from the bottom up, wherein the micro-cavity structure (30) comprises a lower reflecting mirror (31), an active region (32) and an upper reflecting mirror (33) which are sequentially grown from the bottom up; and the active region (32) consists of gallium-nitrogen-arsenic (321) and gallium arsenide (322) which are alternatively grown. The device effectively prolongs the relaxation time of electronsin the gallium-nitrogen-arsenic material and lays a solid foundation for the realization of spin dynamic storage and quantum computers by placing the gallium-nitrogen-arsenic material with a long relaxation time in the micro-cavity at the room temperature to serve as the active region and utilizing the strong coupling mechanism of the micro-cavity.

Description

technical field [0001] The present invention relates to the field of spin-related technologies, in particular to the field of spin storage technology, and provides a device structure capable of realizing spin dynamic storage, and the invention can be applied to related technologies of spin dynamic storage. Background technique [0002] In recent years, with the development of the microelectronics industry and the improvement of the integration of transistors, the scale of electronic devices has approached the order of the electron wave function, and the quantum size effect has become an important factor restricting the performance of traditional electronic devices. Moore's Law, which has been regarded as the golden rule for 30 years, is facing a huge challenge. In fact, the newly introduced dual-core technology used in personal computers is a benefit measure to make up for the speed bottleneck of electronic devices. [0003] We know that the spin of electrons is the most bas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/161
Inventor 孙晓明郑厚植甘华东
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI