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Light control device, semiconductor wafer, and light control system

A light control and wafer technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of high working voltage and slow light, and achieve the effect of fast switching speed

Inactive Publication Date: 2010-12-15
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Light control devices such as shutters have gradually improved their performance by applying PLZT, which is a thin film formed on a substrate, to light control devices, but there are still problems such as high operating voltage and slow switching (switching) speed of light

Method used

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  • Light control device, semiconductor wafer, and light control system
  • Light control device, semiconductor wafer, and light control system
  • Light control device, semiconductor wafer, and light control system

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other Embodiment approach

[0068] As mentioned above, although this invention was described based on embodiment, it should not be understood that the description and drawing which make a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples, and operating techniques will be apparent to those skilled in the art.

[0069] For example, in the embodiment, the electrodes 30 and 40 of the light control device 1 are described as comb-shaped electrodes, but as long as they are electrodes capable of applying an electric field along the crystal axis of the electro-optical film 20, for example, they may be a set of electrodes arranged in parallel to each other. electrode.

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Abstract

Disclosed is a light control device comprising a single crystal substrate (10), an electro-optic thin film (20) formed on the single crystal substrate (10) and having an electro-optic effect, and a plurality of electrodes (30, 40) respectively arranged along the crystal axis of the electro-optic thin film (20) for applying an electric field along the crystal axis of the electro-optic thin film (20).

Description

technical field [0001] The present invention relates to a light control device, in particular to a light control device utilizing electro-optical effect, a semiconductor wafer and a light control system. Background technique [0002] In recent years, for example, a light control device using a material having an electro-optic effect such as lead lanthanum zirconium titanate (PLZT: Lead Lanthanum Zirconium Titanate) has been proposed. PLZT has (Pb 1-y La y )(Zr 1-x Ti x )O 3 composition of transparent ceramics. The so-called "electro-optic effect" is a phenomenon in which when an electric field is applied to a substance, polarization occurs in the substance and the refractive index changes. When using the electro-optic effect, the phase of the light transmitted through the material having the electro-optic effect can be switched by applying a voltage through the switch. Therefore, a light modulation material having an electro-optic effect can be used in a light control...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/03
CPCG02F1/05G02F2201/124G02F1/0136
Inventor 藤森敬和藤井刚
Owner ROHM CO LTD