48 results about "Electro-optic effect" patented technology

An optical device is described. The optical device includes a waveguide, a first engineered electrode, and a second engineered electrode. The waveguide includes at optical material(s) having an electro-optic effect. The optical material(s) include lithium. A portion of the waveguide has a waveguide width. The first engineered electrode includes a first channel region and first extensions protruding from the first channel region. The first extensions are closer to the portion of the waveguide than the first channel region is. The second engineered electrode includes a second channel region and second extensions protruding from the second channel region. The second extensions are closer to the portion of the waveguide than the second channel region is. A first extension of the first extensions is a distance from a second extension of the second \extensions. The distance is less than the waveguide width.

Provided is an optical control element capable of arranging an input portion and an output portion of an optical waveguide on the same side of a substrate in which the optical waveguide is formed, and capable of reducing differences in the configuration of each branch waveguide while minimizing optical path differences between branch waveguides. The optical control element has a substrate (1) having an electro-optic effect, an optical waveguide (2) formed in the substrate, and a control electrode that controls an optical wave propagating in the optical waveguide, characterized in that an input portion (incident light (L1)) and an output portion (emitted light (L2)) of the optical waveguide are formed on the same side of the substrate, the optical waveguide has at least one Mach-Zehnder type optical waveguide portion (MZ) having two branch waveguides (21, 22) branched from one optical waveguide and recombining the two branch waveguides to form one optical waveguide, and the branch waveguides have an even number of return portions (A1, A2).

The invention relates to the technical field of optical sensing, in particular to a metasurface waveguide array based on a silicon carbide substrate and a spectrum sensing system. The system comprises a coupling modulation module, a waveguide transmission module and a spectral analysis module, the coupling modulation module realizes multi-physical field coupling modulation through a nonlinear coupling superposition principle of a thermo-optical effect and an electro-optical effect; the waveguide transmission module selectively activates waveguide channel combination based on a neural network prediction model and dynamically optimizes transmission parameters through an online reinforcement learning algorithm; the spectral analysis module performs environment compensation correction on the spectral characteristic parameters and outputs a corrected recognition result; according to the invention, multi-physics field coupling modulation, intelligent waveguide channel selection and environment adaptive compensation technologies are innovatively combined, the problems of insufficient precision and poor adaptability of a traditional spectrum sensing system in a complex environment are solved, and high-precision and adaptive spectrum sensing is realized.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

The invention discloses a magneto-optical effect-based dynamic zooming method and an optical system, and the method comprises the steps: arranging at least one magneto-optical crystal between a pre-amplifier and a main amplifier, so as to achieve the dynamic zooming through the magneto-optical effect; wherein the magneto-optical crystal is obtained by combining anisotropic materials with matched refractive indexes, and the anisotropic materials are processed into complementary parabola shapes. According to the invention, the magneto-optic effect is utilized to realize dynamic zooming, and the mode of complementary combination of the crystals with matched refractive indexes is utilized to solve the problem that the additional wavefront shape does not conform to the demand. Compared with an electro-optical effect scheme, an applied magnetic field is a uniform magnetic field along a transmission direction, so that a depolarization problem caused by a transverse component is avoided; compared with the scheme of aperture division, grating division and the like, the dynamic zooming can be realized on the premise of not influencing the output capability of the laser.

The invention provides a method for manufacturing an optical waveguide element. A method for manufacturing an optical waveguide element includes: preparing a structure including a substrate and a ridge-shaped optical waveguide layer that is provided on the substrate and is composed of a crystal material having an electro-optical effect; forming a cladding entirety covering the optical waveguide layer by using a formed film; and performing a heat treatment on the structure after the formation of the cladding layer.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

The invention belongs to the technical field of laser devices, and relates to a bicrystal transverse electro-optical Q-switch which comprises two electro-optical crystals, electrodes, wires and a shell wrapping the electro-optical crystals. The electro-optical crystal is a potassium boron niobate crystal, the chemical formula of the electro-optical crystal is K3Nb3B2O12, the electro-optical crystal comprises a first electro-optical crystal and a second electro-optical crystal, the electro-optical crystal adopts a transverse electro-optical effect, and the first electro-optical crystal and the second electro-optical crystal have the same geometrical shape; the main axes of the first electro-optical crystal and the second electro-optical crystal mutually rotate by 90 degrees around the light passing direction. The electro-optical Q-switch is low in driving voltage, the driving voltage is reduced by 28%-95.6% compared with an existing commercialized electro-optical Q-switch under the condition that the crystal size is kept the same, and the important requirement of low-voltage driving electro-optical devices is met. The electro-optical Q-switch is simple in design, does not use a quarter-wave plate, is beneficial to miniaturized production, and has the advantages of being easy to industrialize and the like.

The application discloses a thin-film lithium niobate-based electro-optic polarization modulator, characterized by comprising a first single-mode optical fiber, an input optical coupler, an electro-optic modulation phase shift region, an output double-waveguide vertical direct receiving coupler and a second single-mode optical fiber connected in sequence, wherein the modulated light enters from the first single-mode optical fiber, is coupled into the electro-optic modulation phase shift region through the input optical coupler, is coupled into the second single-mode optical fiber through the output double-waveguide vertical direct receiving coupler after being modulated in the electro-optic modulation phase shift region, and exits from the second single-mode optical fiber. The application is based on X-cut or Y-cut thin-film lithium niobate, the electric field of the electro-optic modulation region is along the Z-axis direction, the excellent electro-optic effect of lithium niobate material is effectively utilized, the electro-optic polarization modulator has the advantages of fast response speed, low driving voltage and low power consumption. Compared with the polarization multiplexing device with a length of hundreds of microns, the compactness of the structure is greatly improved, and the miniaturization of the device is facilitated.

The application provides a thin-film lithium niobate-based optical frequency comb generation device and method, and belongs to the technical field of optical frequency combs, and comprises a pumping unit for providing single / multi-frequency laser; a microwave modulation unit for performing electro-optic modulation on a normal dispersion double-micro-ring resonant cavity unit to generate modulation sidebands; and the normal dispersion double-micro-ring resonant cavity unit generates an optical frequency comb through normal dispersion, electro-optic effect and third-order nonlinear effect. The single / multi-frequency laser is coupled to the normal dispersion double-micro-ring resonant cavity unit based on thin-film lithium niobate, and the normal dispersion, electro-optic effect and third-order nonlinear effect are combined to realize optical frequency comb spectrum widening and spectrum envelope flattening.

This application provides a gradient-doped ferroelectric thin film device and its fabrication method, relating to the field of optoelectronic device technology. The gradient-doped ferroelectric thin film device comprises, from bottom to top, a substrate, a buried oxide layer, a buffer layer, and a ferroelectric thin film material layer; the ferroelectric thin film material layer is doped with impurity ions, with the doping concentration of the impurity ions increasing sequentially from bottom to top. This application, by employing a bottom-up incremental gradient doping design, optimizes the interface defects and internal stress of the ferroelectric thin film, overcomes the problem of lattice mismatch between ordinary ferroelectric thin films and the substrate layer, achieves improved crystal quality and enhanced electro-optic coefficient, and effectively improves the electro-optic effect.

The invention provides a gradient doped ferroelectric film device and a preparation method thereof, and relates to the technical field of optoelectronic devices. The gradient doped ferroelectric thin film device comprises a substrate, a buried oxide layer, a buffer layer and a ferroelectric thin film material layer which are sequentially stacked from bottom to top, impurity ions are doped in the ferroelectric film material layer, and the doping concentration of the impurity ions is sequentially increased from bottom to top. By adopting the gradient doping design increasing from bottom to top, the interface defect and the internal stress of the ferroelectric film are optimized, the problem of lattice mismatch between a common ferroelectric film and the substrate layer is solved, the crystal quality is improved, the electro-optical coefficient is enhanced, and the electro-optical effect is effectively improved.

The present application provides a kind of light modulator, light source module and light modulation method capable of high speed and stable control of the output light of light modulator, and excellent response and stability.Light modulator (101) is characterized in that, with: light modulation element (11), multiple optical waveguides are formed in thin film by material with electro-optic effect;Electrode is arranged on the thin film, and multiple optical waveguides are applied with electric field;Driving part (driving circuit (120)), which applies modulation voltage to electrode;Bias application part (bias application circuit (130)), which applies bias voltage to electrode;And feedforward control part (feedforward control circuit (150)), which compensates the DC drift generated in multiple optical waveguides, wherein the feedforward control part makes the bias voltage output by bias application part change with time based on the transfer function set in advance according to the characteristics of DC drift.

This application discloses an optical sensing structure and an optical detector, belonging to the field of integrated optical sensing technology. It aims to achieve on-chip integrated construction and efficient electro-optical control of high-order singular surfaces to improve the signal response intensity and weak signal detection limit of optical sensing. The optical sensing structure includes an optical waveguide, multiple micro-ring resonators, a circular aperture array, and multiple sets of metal electrodes. The optical waveguide and multiple micro-ring resonators are formed by etching optically functional thin films with electro-optic effects. The multiple micro-ring resonators are arranged sequentially along the extension direction of the optical waveguide and are evanescently coupled to it. The circular aperture array is disposed at the end of the optical waveguide to reflect the transmitted optical signal, forming a closed optical loop. Multiple sets of metal electrodes are respectively arranged in pairs on both sides of the optical waveguide and segmented along the waveguide, corresponding to the optical waveguide regions between two adjacent micro-ring resonators and between the micro-ring resonators and the circular aperture array away from the input end of the optical waveguide.

This invention relates to the field of optical sensing technology, and more particularly to a metasurface waveguide array and spectral sensing system based on a silicon carbide substrate. The system includes a coupling modulation module, a waveguide transmission module, and a spectral analysis module. The coupling modulation module achieves multi-physics coupling modulation through the nonlinear coupling superposition principle of thermo-optic and electro-optic effects. The waveguide transmission module selectively activates waveguide channel combinations based on a neural network prediction model and dynamically optimizes transmission parameters through an online reinforcement learning algorithm. The spectral analysis module performs environmental compensation correction on spectral feature parameters and outputs the corrected recognition results. This invention innovatively combines multi-physics coupling modulation, intelligent waveguide channel selection, and environmental adaptive compensation technology, solving the problems of insufficient accuracy and poor adaptability of traditional spectral sensing systems in complex environments, and achieving high-precision, adaptive spectral sensing.

An optical device including a waveguide and an electrode is described. The waveguide includes at least one optical material having an electro-optic effect. The electrode includes a channel region and extensions protruding from the channel region. The extensions are closer to a portion of the waveguide than the channel region is.

The invention discloses an optical matrix multiplier, which comprises a laser light source, a grating coupler, a BTO electro-optical modulation array, an MZI waveguide array, a photoelectric detector array and a control unit, and is characterized in that the laser light source generates coherent light with stable wavelength, and the coherent light enters a BTO waveguide after being coupled by the grating coupler and then enters the MZI waveguide array through multi-stage beam splitting; the excellent electro-optical effect of a BTO material is utilized, phase modulation is achieved under electrode driving so as to load matrix element information, and then linear operation of matrix multiplication is completed through interference superposition of an MZI waveguide array. And the output optical signal is converted into an electric signal by the photoelectric detector array and is processed by the control unit to obtain an operation result. The system is compact in structure, high in modulation linearity, high in response speed, low in power consumption and capable of achieving multi-channel parallel optical calculation. Compared with a traditional silicon-based or lithium niobate modulator, higher integration density and stability are achieved, and the calculation efficiency of matrix multiplication in the fields of artificial intelligence, scientific calculation, signal processing and the like is remarkably improved.

The present application provides an optical waveguide element, an optical modulation device using the optical waveguide element, and an optical transmission apparatus. The optical waveguide element can make the length of a substrate having an electro-optic effect short and can sufficiently ensure a space required for arrangement of an optical receiving element. An optical waveguide element has a substrate (1) having an electro-optic effect, an optical waveguide (2) formed on the substrate, and an optical receiving element (PD) arranged on the substrate and monitoring an optical wave propagating in the optical waveguide or an optical wave radiated from the optical waveguide, characterized by having a monitoring optical waveguide (22) extending from the optical waveguide to the optical receiving element, the monitoring optical waveguide having a turn-back portion (23) with respect to an outgoing direction of the optical waveguide, and the optical receiving element being arranged at a portion (24) after the turn-back portion of the monitoring optical waveguide.

The application discloses an optical memristor, relates to the fields of photonic integrated circuits and optical computing, and comprises a waveguide layer, a ferroelectric film layer, an electrode structure and a substrate; the ferroelectric film layer is located on the upper surface of the substrate; the waveguide layer and the electrode structure are both located on the upper surface of the ferroelectric film layer; the waveguide layer is used for propagating an incident light signal and performing amplitude modulation on the incident light signal; the electrode structure is used for applying an electric field to the ferroelectric film layer; and the ferroelectric film layer is used for performing phase modulation on the light signal propagating in the waveguide layer under the action of the electric field. The ferroelectric material is used as an optical switch of the optical memristor, high-efficiency modulation of light phase is realized by using the non-volatility and high electro-optic effect of the ferroelectric material, and the optical memristor has the advantages of low energy consumption and fast response.

An optical waveguide element is provided that suppresses insertion loss related to coupling with optical fibers, etc., while achieving miniaturization of the optical waveguide element. An optical waveguide element, an optical modulation device, and an optical transmission device are provided. The optical waveguide element includes: a ribbed optical waveguide (10) formed of a material (1) having an electro-optic effect; and a reinforcing substrate (2) supporting the optical waveguide. The optical waveguide element is characterized in that one end of the optical waveguide forms a tapered portion (11) whose width tapers toward the end face of the reinforcing substrate, and includes a structure (3) comprising a material having a higher refractive index than the material constituting the reinforcing substrate to cover the tapered portion, and a coating layer (4) comprising a material having a lower refractive index than the material constituting the structure to cover the structure.

This application discloses an anti-parity-time symmetric singularity optical sensing structure and a temperature sensor, belonging to the field of integrated optical sensing technology. Its main objective is to construct an on-chip integrated sensing structure capable of stably forming an anti-parity-time symmetric singularity. This structure allows for free control of the imaginary coupling strength between optical modes through electrode modulation and thin-film electro-optic effects. The anti-parity-time symmetric singularity optical sensing structure includes two coupled waveguides, two microring resonators, and two sets of electrodes. The two coupled waveguides and two microring resonators are formed by etching optically functional thin films with electro-optic effects. The two microring resonators are adjacent and spaced apart, with different sizes. The two coupled waveguides are of the same size, located on opposite sides of the arrangement direction of the two microring resonators, and are evanescently coupled to both microring resonators. The two sets of electrodes are located between the two microring resonators and are respectively disposed on opposite sides of the two coupled waveguides.

According to the GIS electric field partial discharge fusion sensing device and method, in the device, the first end of a fluorescent optical fiber is embedded and fixed to the inner side of a flange plate and exposed to the internal environment of a GIS cavity so as to receive ultraviolet light and / or visible light signals generated by partial discharge; the second end is connected to the input end of the photomultiplier through a vacuum flange; the first end of the electric field optical fiber probe is fixed to the center of the flange plate and exposed in the internal environment of the GIS cavity, and the second end of the electric field optical fiber probe is connected to the input end of the photoelectric detector through the vacuum flange. The electric field optical fiber probe converts the electric field change in the GIS cavity into a modulation optical signal of the change of the refractive index of the optical signal based on the electro-optical effect; the photomultiplier is used for receiving an optical signal from the fluorescent optical fiber, amplifying the optical signal and converting the optical signal into a partial discharge pulse electric signal; and the photoelectric detector is used for receiving the modulation optical signal from the electric field optical fiber probe and demodulating the modulation optical signal into an electric field change electric signal.

To provide a method for manufacturing an optical waveguide element by which an optical waveguide element having low propagation loss can be manufactured.SOLUTION: The method M1 for manufacturing an optical wave guide device includes a step S1 of preparing a structural body including a substrate and a ridge-shaped optical wave guide layer provided on the substrate and made of a crystalline material having an electro-optic effect, a step S2 of forming all of a cladding layer covering the optical wave guide layer, and a step S3 of performing heat treatment on the structural body on which the cladding layer has been formed.SELECTED DRAWING: Figure 1

A method of manufacturing an optical waveguide element includes: a step of preparing a structure including a substrate and a ridge-shaped optical waveguide layer provided on the substrate and made of a crystal material having an electro-optic effect; a step of depositing all of a cladding layer covering the optical waveguide layer; and a step of performing a heat treatment on the structure on which the cladding layer has been deposited.

The invention discloses a thin film lithium tantalate external cavity frequency stabilization frequency sweep laser and a preparation and working method thereof, and belongs to the technical field of integrated lasers. The laser is formed by mixing and integrating a semiconductor gain chip and a thin-film lithium tantalate external cavity chip. A phase shifter, an embedded mixed grating, an optical switch and a phase modulator are integrated on the lithium tantalate chip in a monolithic mode. The method is characterized in that a periodic composite driving signal is applied to a phase shifter and a grating through a driver, and the signal comprises a direct-current voltage section and a frequency sweeping voltage section in one period, so that the laser alternately works in a frequency stabilization mode and a frequency sweeping mode. In the frequency stabilization time period, the optical switch is turned on, and the laser frequency is locked in the external frequency reference cavity through the PDH technology; in the frequency sweeping time period, the optical switch is turned off, and the laser outputs linear frequency sweeping laser. The low direct current drift and strong electro-optical effect of lithium tantalate are utilized, the problems that frequency sweeping and frequency stabilization of a traditional laser cannot work cooperatively and the direct current drift of a lithium niobate scheme is large are solved, and the laser has the advantages of being high in frequency stability, high in frequency sweeping speed and free of parasitic amplitude modulation.

This invention relates to the field of semiconductor laser technology, specifically to an on-chip optical pulse neural network computing unit based on thin-film lithium niobate (TFLN) microcavities, comprising: a substrate; a thin-film lithium niobate (TFLN) layer on the substrate; and a microcavity array formed in the TFLN layer. The microcavity array includes at least two cascaded microcavities, arranged linearly or in a two-dimensional grid pattern. Each microcavity supports whispering-gallery modes and has a quality factor, which enhances the intracavity light intensity by approximately Q / (2π) times compared to the input light intensity under critical coupling conditions. In this invention, the second-order electro-optic effect and the third-order Kerr effect of the TFLN achieve Q-value enhancement within the microcavities, enabling on-chip implementation of a nonlinear mapping equivalent to ReLU / Sigmoid, thus overcoming the bottleneck of the lack of intrinsic nonlinearity in silicon-based optical computing.

A radar system according to the invention has a central unit (Z), at least one radar transmitting unit (S-1, S-2, S-3, S-n) and at least one radar receiving unit (E-1, E-2, E-3, E-n), which each comprise optical and electrical components and exchange signals via at least one transmission medium (G). In the central unit (Z) and / or at least one radar transmitting unit (S-1, S-2, S-3, S-n) and / or at least one radar receiving unit (E-1, E-2, E-3, E-n), a polarization controller (18, 31, 41) is provided, which is designed to adjust the polarization state of a signal received via the transmission medium (G) on the basis of an electro-optical effect.

The invention relates to a terahertz wave single-shot measuring device and method based on cross polarized wave spectrum broadening. The measuring device comprises the steps that light emitted by a femtosecond laser light source is split into reflected light and transmission light after passing through a beam splitting piece; the reflected light is used as pump light for generating terahertz waves, and the generated terahertz waves are collected by a parabolic mirror and focused on an electro-optical crystal; transmission light sequentially passes through a first reflecting mirror, a diaphragm, a half-wave plate, a first linear polarizer, a lens combination and a plurality of third-order nonlinear crystal combinations to generate cross-polarized waves with broadened frequency spectrums; the generated cross polarized wave is broadened by the chirped pulse to serve as new detection light, the new detection light is further focused on the electro-optical crystal through the lens and coincides with the focus of the terahertz wave, the detection light modulated by the electro-optical effect is collected by the spectrograph, a spectrum is detected, and single-shot measurement of the terahertz wave is achieved. Compared with the prior art, the method has the advantages of high time resolution, high signal-to-noise ratio and the like for single-shot measurement of terahertz waveforms.

Provided is an optical waveguide element that prevents breakage of a thin plate, particularly breakage of an optical waveguide. The optical waveguide element includes a thin plate (1) having an electro-optic effect and a thickness of 10 μm or less, in which an optical waveguide (2) is formed; and a reinforcing substrate that supports the thin plate. The optical waveguide element is characterized in that the thin plate (1) has a rectangular shape in plan view, a heterogeneous element layer (3) is formed in at least a portion between the outer periphery of the thin plate and the optical waveguide (2), the heterogeneous element layer (3) is formed by disposing an element different from the element constituting the thin plate in the thin plate, and the sum of the lengths of the cleavage planes of the thin plate that cross the formation region of the heterogeneous element layer is 5% or more of the width of the thin plate in the short side direction.

The invention belongs to the technical field of laser, and particularly discloses a femtosecond laser energy and polarization efficient cooperative regulation laser processing device which comprises a femtosecond laser module, an energy regulation module, a polarization regulation module, an imaging illumination module, a loading and processing module, a coupling control module and a comprehensive control module. The energy adjusting module comprises a first quarter-wave plate, a first electro-optical modulator and a first polarization beam splitter prism which are arranged in sequence; the polarization adjusting module comprises a second quarter-wave plate, a second electro-optical modulator and a third quarter-wave plate which are arranged in sequence; the coupling control module is connected with the comprehensive control module, the femtosecond laser module, the first electro-optical modulator and the second electro-optical modulator, and the comprehensive control module is connected with the imaging illumination module and the loading and processing module. Based on the electro-optical effect principle of electro-optical crystals in electro-optical modulators, two electro-optical modulators are coupled, so that cooperative adjustment of femtosecond laser energy and polarization optical parameters can be realized, and the femtosecond laser energy and the polarization optical parameters do not interfere with each other.