Display device, process for producing the display device, and sputtering target
A technology for a display device and a manufacturing method, which is applied in the fields of sputtering coating, identification device, semiconductor/solid-state device manufacturing, etc., can solve problems such as insufficient wiring resistance of Al-based alloys, achieve excellent productivity, and improve corrosion resistance and the effect of heat resistance
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Embodiment approach 1
[0179] refer to Figure 7 , the embodiment of the amorphous silicon TFT substrate will be described in detail.
[0180] Figure 7 is the above Figure 6 (An example of the display device of the present invention) The enlarged view of the main part of A is a cross-sectional schematic explanatory view illustrating a preferred embodiment of the TFT substrate (bottom gate type) of the display device of the present invention.
[0181] In this embodiment, Al alloy films are used as source-drain electrodes / signal lines (34) and gate electrodes / scanning lines (25, 26). Compared with conventional TFT substrates, barrier metal layers are respectively formed on the scanning lines 25, on the gate electrodes 26, and on or below the signal lines 34 (source electrodes 28 and drain electrodes 29). In the TFT substrate of this embodiment, it is possible to These barrier metal layers are omitted.
[0182] That is, according to this embodiment, the Al alloy film used for the drain electrode ...
Embodiment approach 2
[0199] refer to Figure 16 , the embodiment of the polysilicon TFT substrate will be described in detail.
[0200] Figure 16 It is a cross-sectional schematic explanatory view illustrating a preferred embodiment of the top-gate TFT substrate of the present invention.
[0201] This embodiment differs from Embodiment 1 mainly in that polysilicon is used as the active semiconductor layer instead of amorphous silicon, and that a top-gate TFT substrate is used instead of a bottom-gate type. In detail, in Figure 16 In the polysilicon TFT substrate of the present embodiment shown, the active semiconductor film is made of a polysilicon film (Poly-Si) not doped with phosphorus, or a polysilicon film (Poly-Si) ion-implanted with phosphorus or arsenic (n + Poly-Si) formation, with the above Figure 7 The shown amorphous silicon TFT substrate is different. In addition, the signal line is connected via an interlayer insulating film (SiO X ) is formed in such a way that it intersect...
Embodiment 1-1
[0217] From the viewpoint of corrosion resistance, the occurrence of black spots after cleaning with the stripping liquid was evaluated. As understood from the above description, the black spots generated after cleaning with the stripping liquid are generated starting from the intermetallic compound. An Al alloy film with a film thickness of 300 nm was formed on a glass substrate (Igre 2000 manufactured by Corning, 2 inches in diameter and 0.7 mm in thickness) using a sputtering device, and heat-treated in a heat treatment furnace at 300°C in a nitrogen atmosphere for 30 minutes . The temperature in the furnace was kept at 300° C. under nitrogen flow, and the substrate was put in. After the substrate was put in, it took 15 minutes to wait for the furnace temperature to stabilize, and then heat treatment was performed for 30 minutes. Next, a stripping solution (TOK106, manufactured by Tokyo Ohka) was diluted 55,000 times with pure water to prepare an alkaline liquid with pH 10...
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Abstract
Description
Claims
Application Information
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