Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency

Abstract

The invention discloses a method for manufacturing a gallium nitride based light-emitting diode with high light extracting efficiency, comprising the following steps of: providing a sapphire substrate; sequentially growing an N-GaN layer, a light-emitting layer and a P-GaN layer on the substrate; etching part of a surface with the P-GaN layer through a photomask etching process till the N-GaN layer is exposed; plating a transparent conductive layer on the P-GaN layer and the exposed N-GaN layer for forming an ohmic contact; removing part of the transparent conductive layer through a wet etching method to separate the transparent conductive layers on the P-GaN layer from the exposed N-GaN layer; respectively manufacturing a P-electrode and an N-electrode on the separated transparent conductive layers through a photomask etching process; and cutting the substrate into a plurality of light-emitting diode chips by grinding and thinning the substrate. The LED chips manufactured through the method avoid the light absorption and shade of large-area N-electrode metal in the traditional chip so as to improve the light-emitting brightness of the chips.

Description

technical field [0001] The invention relates to a preparation process of a light-emitting semiconductor chip, in particular to a preparation method of a gallium nitride-based light-emitting diode with high light extraction efficiency. Background technique [0002] A light-emitting diode is a photoelectric conversion device that combines a P-type semiconductor and an N-type semiconductor, and emits light through the recombination of electrons and holes. GaN-based light-emitting diodes include light-emitting units each having an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer made of a GaN-based material and sequentially formed on a substrate made of sapphire, silicon, or the like. [0003] GaN-based blue LED is an electroluminescent device, and the current spread distribution plays a very important role in the characteristics of the entire device, affecting the uniformity of light emission in the active area of ​​the device, heat dissipati...

AI Technical Summary

Problems solved by technology

like figure 1 Shown is a conventional GaN-based light-emitting diode chip, its structure includes: P-GaN layer 11, transparent conductive layer 12, P electrode ohmic contact 13, N-GaN layer 14, N electrode ohmic contact 15; N electrode ohmic contact 15; The contact 15 is generally formed by directly plating a metal layer on the N-GaN layer 14, and in order to make the current spread evenly, the N electrode metal needs to surround the periphery of the entire LED chip, which directly causes a large part of the chip to be blocked by the metal, resulting in no light In addition, the metal electrodes directly plated on the surface of the N-GaN layer 14 will also absorb light, which greatly affects the light extraction efficiency of the LED chip

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