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Structural material for modulation of terahertz waves

A structural material and terahertz technology, applied in the field of electronics, can solve problems such as application limitations and achieve the effect of large modulation depth

Inactive Publication Date: 2011-01-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, carriers in semiconductors absorb terahertz waves very significantly, which limits the improvement of terahertz modulation amplitude to a certain extent. The currently proposed terahertz modulators can only achieve 50% modulation amplitude, which is very important for Its application poses a great limitation

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  • Structural material for modulation of terahertz waves
  • Structural material for modulation of terahertz waves
  • Structural material for modulation of terahertz waves

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Embodiment Construction

[0017] Taking the linear electromagnetic resonance unit as an example, the preparation, testing and analysis process of the structural material for terahertz wave modulation provided by the present invention is described in detail below:

[0018] Step 1: Use the commercial software CST Microwave Studio to establish a structural material model structure for terahertz wave modulation, in which the electromagnetic resonator array 1 is an optimized linear electromagnetic resonator unit on the premise that the electromagnetic resonator unit material is a perfect metal The length l, width w, distance t and d between elements to obtain the maximum resonance depth. The best parameters obtained are: l=108 μm, w=13.5 μm, t=6 μm, d=30 μm.

[0019] Step 2: Using radio frequency magnetron sputtering method, by VO 2 The target is deposited on a quartz glass substrate with an area of ​​10 mm × 10 mm and a thickness of 500 microns to deposit about 0.8 micron thick VO 2 film. figure 2 The ...

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Abstract

The invention discloses a structural material for the modulation of terahertz waves, which belongs to the technical field of electronics. The structural material comprises a medium substrate (2) and a vibratron array (1) attached to the surface of the medium substrate (2), wherein the medium substrate (2) is the medium material substrate highly transparent to the terahertz waves; the vibratron array (1) consists of a plurality of vibratron units with the same shape and size; and each vibratron unit is formed by a vanadium dioxide thin film on deposited on the surface of the medium substrate (2). The structural material adopts a medium material highly transparent to the terahertz waves as the substrate to achieve little and stable terahertz wave absorption loss, adopts the vanadium dioxide thin film which is a high-speed phase change material to manufacture the vibratron array, realizes the modulation of the terahertz waves by triggering the phase change of the vanadium dioxide thin film by thermal or laser modulation, and compared with a conventional metal vibratron array-based terahertz modulator, has greater modulation depth.

Description

technical field [0001] The invention belongs to the field of electronic technology, and relates to a terahertz band electromagnetic wave modulation technology, in particular to a structural material for terahertz wave modulation. Background technique [0002] Terahertz (THz, 1THz=10 12 Hz) band refers to the electromagnetic spectrum region with a frequency from 100GHz to 10THz, which is quite wide between millimeter wave and infrared light, and is called the "THz gap" in the electromagnetic spectrum. At present, wireless communication is facing the contradiction between limited spectrum resources and rapidly increasing bandwidth and high-speed service requirements. Because the theoretical transmission rate of terahertz wireless communication can reach 1-10Gb / s, and it has the advantages of abundant frequency band resources, large bandwidth, and good confidentiality. Therefore, the new-generation communication system using terahertz waves as the communication carrier is att...

Claims

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Application Information

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IPC IPC(8): G02F1/00
Inventor 文岐业张怀武杨青慧刘颖力李元勋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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