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41results about How to "Limit thickness" patented technology

Synchronous laser heat treatment method for laser additive manufacturing nickel-based high-temperature alloy

The invention discloses a synchronous laser heat treatment method for laser additive manufacturing a nickel-based high-temperature alloy. According to the method, morphology size and distribution of Laves phase can be effectively regulated and controlled, the Laves phase is converted into a discrete granular shape from a deposited continuous long strip, and the volume fraction of the Laves phase is obviously reduced along with extension of the laser heat treatment time. According to the laser heat treatment method, synchronous heat treatment in a deposition forming process can be realized, local area Laves phase morphology and distribution can be regulated and controlled under the condition that the tissue performance of a laser repair base material area is not influenced, the granular Laves phase which are fined and dispersion distributed is obtained, so that the overall mechanical property of parts is improved, and effective utilization can be obtained in the repair and remanufacturing of the high-temperature alloy structural member; and in addition, the method can also be applied to the fields of high-temperature alloy material preparation, high-temperature alloy structural member rapid manufacturing and the like.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Full-automatic continuous filtering and filter pressing slag unloading machine

The invention relates to a full-automatic continuous filtering and filter pressing slag unloading machine comprising a filtering device, wherein the filtering device comprises a filter cartridge, a filtering stirring shaft and a first filtering medium; a liquid inlet is arranged on the top end of the filter cartridge; the filtering stirring shaft is installed in the filter cartridge through a sealing bearing, and a helical blade is arranged on the filtering stirring shaft; the first filtering medium is arranged between the inner wall of the filter cartridge and the filtering stirring shaft; a liquid outlet is arranged on the bottom end of the filter cartridge; and a press filtering device, the press filtering device comprises a press filter cartridge, a press filtering stirring shaft and a second filtering medium; a slag inlet is arranged on the top end of the press filter cartridge, and the slag inlet is communicated with the liquid outlet; the press filtering stirring shaft is installed in the press filter cartridge through a sealing bearing, and a helical blade is arranged on the press filtering stirring shaft; the second filtering medium is arranged between the inner wall of the press filter cartridge and the press filtering stirring shaft; and a slag outlet is arranged on the bottom end of the press filter cartridge, and an automatic resetting switch is arranged at the slag outlet. The full-automatic continuous filtering and filter pressing slag unloading machine provided by the invention can be conducted with continuous pressure filtration, can automatically feed and automatically discharge and unload slag and is consistently located at a thin layer filtering environment, so that the filtering speed is high, and the machine is operated under a complete sealed state, and the operation environment is excellent.
Owner:王启

Light emitting diode epitaxial wafer and manufacturing method thereof

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method of the light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a nucleating layer, a buffer layer, an undoped GaN layer, an n-type layer, a multiple-quantum-well layer, a first p-type GaN layer, a second p-type GaN layer, an electron barrier layer and a p-type layer, wherein the nucleating layer, the buffer layer, the undoped GaN layer, the n-type layer, the multiple-quantum-well layer, the first p-type GaN layer, the second p-type GaN layer, the electron barrier layer and the p-type layer grow upwards on the substrate. The thickness of the electron barrier layer ranges from 50 nm to 150 nm, the growth temperature of the first p-type GaN layer ranges from 600 DEG C to 800 DEG C, the growth pressure of the first p-type GaN layer ranges from 400 Torr to 800 Torr, the growth temperature of the second p-type GaN layer ranges from 800 DEG C to 1000 DEG C, the growth pressure of the second p-type GaN layer ranges from 50 Torr to 500 Torr. The first p-type GaN layer growing under high pressure and low temperature is arranged, and a hole injection channel is provided, so that hole injection efficiency is improved; through the second p-type GaN layer growing under low pressure and high temperature, crystalline quality is improved, the thickness of the electron barrier layer is limited, and hole injection efficiency is improved.
Owner:HC SEMITEK SUZHOU

Automatic continuous filter press filter slag unloader

The invention relates to a full-automatic continuous filtering and filter pressing slag unloading machine comprising a filtering device, wherein the filtering device comprises a filter cartridge, a filtering stirring shaft and a first filtering medium; a liquid inlet is arranged on the top end of the filter cartridge; the filtering stirring shaft is installed in the filter cartridge through a sealing bearing, and a helical blade is arranged on the filtering stirring shaft; the first filtering medium is arranged between the inner wall of the filter cartridge and the filtering stirring shaft; a liquid outlet is arranged on the bottom end of the filter cartridge; and a press filtering device, the press filtering device comprises a press filter cartridge, a press filtering stirring shaft and a second filtering medium; a slag inlet is arranged on the top end of the press filter cartridge, and the slag inlet is communicated with the liquid outlet; the press filtering stirring shaft is installed in the press filter cartridge through a sealing bearing, and a helical blade is arranged on the press filtering stirring shaft; the second filtering medium is arranged between the inner wall of the press filter cartridge and the press filtering stirring shaft; and a slag outlet is arranged on the bottom end of the press filter cartridge, and an automatic resetting switch is arranged at the slag outlet. The full-automatic continuous filtering and filter pressing slag unloading machine provided by the invention can be conducted with continuous pressure filtration, can automatically feed and automatically discharge and unload slag and is consistently located at a thin layer filtering environment, so that the filtering speed is high, and the machine is operated under a complete sealed state, and the operation environment is excellent.
Owner:王启

Preparation method of composite desalination layer nanofiltration membrane

The invention relates to a preparation method of a composite desalination layer nanofiltration membrane. The method comprises the following steps of coating a polysulfone ultrafiltration base membranewith a polyvinyl alcohol-polyethyleneimine mixed solution containing a crosslinking agent and a catalyst, and carrying out crosslinking reaction to form a positively charged desalination layer on a surface of the polysulfone ultrafiltration base membrane; cleaning the membrane by using a solution containing an acid absorbent to remove sulfuric acid and glutaraldehyde which does not participate inthe reaction; removing water drops on the surface of the membrane, applying an oil phase solution, and allowing a large number of amine chain segments which do not participate in the cross-linking reaction on a surface of the positively charged desalination layer to react with polyacyl chloride in the oil phase to generate a polysulfonyl chloride desalination layer. According to the technical scheme, a thin polysulfonamide desalination layer can be obtained, meanwhile, the compactness of the polysulfonamide desalination layer can be improved by prolonging the reaction time without worrying about the influence on the flux due to the formation of an over-thick desalination layer, the problems that the reaction speed of polyamine and polyacyl chloride is low, and polyamine molecules penetrate through a loose primary desalination layer to diffuse to an oil phase such that a finally formed desalination layer is large in thickness and low in flux can be solved.
Owner:烟台金正环保科技有限公司

Self-centering and anti-overturning split type return stroke plate

The invention discloses a self-centering and anti-overturning split type return stroke plate, which comprises two concentric discs, where the front end of the lower disc is provided with an enhanced limit boss and a sliding shoe oil film thickness limit boss, a sliding shoe hole of the lower disc is formed by the connection of equal-radian nine inferior arcs which are arranged around a spherical hinge supporting hole axis inside the limit boss, nine equal-radian small kidney-shaped grooves are formed around the spherical hinge supporting hole axis in a spherical arc surface boss at the rear end surface of the lower disc, small kidney-shaped grooves are communicated with an oil chamber on the bottom surface of slid shoe through an oil passing hole; a slide shoe hole is formed by the connection of equal-radian nine major arcs which are arranged around the spherical hinge supporting hole axis of the upper disc. The self-centering and anti-overturning split type return plate can complete the reliable return stroke of an axial piston pump plunger sliding shoe component in an oil absorption area, the return stroke plate is designed to be matched with a spherical surface of a swash plate, so that the force condition of the return stroke plate is good, automatic centering is strong, the split type return stroke plate has a capability of anti-overturning; the structure of the return stroke can effectively avoid the eccentric wear caused by the directly contacting of the sliding shoe and the swash plate, the maximum oil film thickness of a slide shoe pair is limited, and the mechanical efficiency and volume efficiency of a pump can be improved.
Owner:ZHEJIANG UNIV

Self-centering anti-overturn split return plate

The invention discloses a self-centering and anti-overturning split type return stroke plate, which comprises two concentric discs, where the front end of the lower disc is provided with an enhanced limit boss and a sliding shoe oil film thickness limit boss, a sliding shoe hole of the lower disc is formed by the connection of equal-radian nine inferior arcs which are arranged around a spherical hinge supporting hole axis inside the limit boss, nine equal-radian small kidney-shaped grooves are formed around the spherical hinge supporting hole axis in a spherical arc surface boss at the rear end surface of the lower disc, small kidney-shaped grooves are communicated with an oil chamber on the bottom surface of slid shoe through an oil passing hole; a slide shoe hole is formed by the connection of equal-radian nine major arcs which are arranged around the spherical hinge supporting hole axis of the upper disc. The self-centering and anti-overturning split type return plate can complete the reliable return stroke of an axial piston pump plunger sliding shoe component in an oil absorption area, the return stroke plate is designed to be matched with a spherical surface of a swash plate, so that the force condition of the return stroke plate is good, automatic centering is strong, the split type return stroke plate has a capability of anti-overturning; the structure of the return stroke can effectively avoid the eccentric wear caused by the directly contacting of the sliding shoe and the swash plate, the maximum oil film thickness of a slide shoe pair is limited, and the mechanical efficiency and volume efficiency of a pump can be improved.
Owner:ZHEJIANG UNIV

Combined type circulating airflow separation equipment

According to the combined type circulating airflow separation equipment, the vibrating screen on the upper side of the circulating cavity can achieve preliminary screening of materials and clear away large and small impurities, meanwhile, the obliquely-arranged vibrating screen can enable screened materials to fall into the circulating box through gravity, energy can be saved, and the occupied area of the combined type circulating airflow separation equipment can be reduced; the power section provides a certain wind speed for materials to be screened, the rectification section rectifies airflow entering the winnowing section into uniform airflow, the situation that the separation effect is affected due to the fact that the materials interact with one another and a negative pressure area is generated in the winnowing section is avoided, the materials are evenly separated according to different specific gravities of the materials, and therefore the purpose of separation is achieved. The rotary air duct ensures the stability of air flow in the circulating cavity, and meanwhile, dust in the materials can be prevented from being directly discharged, so that environmental pollution is avoided; the device is simple in structure and small in occupied area, meanwhile, materials can be efficiently screened in a high-quality mode, and high applicability and universality are achieved.
Owner:XINGTAI TIANYUANXING FOOD EQUIP

A light-emitting diode epitaxial wafer and its manufacturing method

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method of the light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a nucleating layer, a buffer layer, an undoped GaN layer, an n-type layer, a multiple-quantum-well layer, a first p-type GaN layer, a second p-type GaN layer, an electron barrier layer and a p-type layer, wherein the nucleating layer, the buffer layer, the undoped GaN layer, the n-type layer, the multiple-quantum-well layer, the first p-type GaN layer, the second p-type GaN layer, the electron barrier layer and the p-type layer grow upwards on the substrate. The thickness of the electron barrier layer ranges from 50 nm to 150 nm, the growth temperature of the first p-type GaN layer ranges from 600 DEG C to 800 DEG C, the growth pressure of the first p-type GaN layer ranges from 400 Torr to 800 Torr, the growth temperature of the second p-type GaN layer ranges from 800 DEG C to 1000 DEG C, the growth pressure of the second p-type GaN layer ranges from 50 Torr to 500 Torr. The first p-type GaN layer growing under high pressure and low temperature is arranged, and a hole injection channel is provided, so that hole injection efficiency is improved; through the second p-type GaN layer growing under low pressure and high temperature, crystalline quality is improved, the thickness of the electron barrier layer is limited, and hole injection efficiency is improved.
Owner:HC SEMITEK SUZHOU
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