Unlock instant, AI-driven research and patent intelligence for your innovation.

Processing method of physical vapor deposition coil and physical vapor deposition coil structure

A technology of physical vapor deposition and processing method, which is applied in the field of physical vapor deposition coil structure and physical vapor deposition coil processing, can solve the problems of poor uniformity of the film, achieve good uniformity, and improve the effect of uniformity and stability

Inactive Publication Date: 2013-04-17
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The physical vapor deposition system including a coil will replace the coil after a long period of operation, and the physical vapor deposition system with a new coil will have poor film uniformity at the beginning

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing method of physical vapor deposition coil and physical vapor deposition coil structure
  • Processing method of physical vapor deposition coil and physical vapor deposition coil structure
  • Processing method of physical vapor deposition coil and physical vapor deposition coil structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The inventors of the present invention have found that the thin film deposited on the substrate by the physical vapor phase system has a certain difference between the thickness in the middle of the substrate and the thickness at the edge of the substrate, and the physical vapor deposition coil is applied to improve the physical vapor deposition system Thin film uniformity issues.

[0013] The physical vapor deposition system including a coil will replace the coil after a period of use, and the inventors of the present invention have found that the film uniformity of the physical vapor deposition system deposited with a new coil will be relatively poor at the beginning .

[0014] The inventors further research found that since the new coil is formed by casting process, after the new coil is installed in the physical vapor deposition system, it is more difficult for ions to bombard the element particles of the new coil, so the uniformity of the formed film will be relati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a processing method of a physical vapor deposition coil and a physical vapor deposition coil structure, wherein the processing method of the physical vapor deposition coil comprises the following steps: providing the physical vapor deposition coil; cleaning the physical vapor deposition coil; and forming a thin film using a material which is consistent with the physical vapor deposition coil on the inner surface of the physical vapor deposition coil. The invention can improve the uniformity and the stability of a physical vapor deposition system.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a processing method of a physical vapor deposition coil and a physical vapor deposition coil structure. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) is a vacuum thin film deposition technology. Physical vapor deposition adopts low-voltage, high-current arc discharge technology. The gas is ionized, and the evaporated substance and its reaction product are deposited on the wafer to form a film by the acceleration of the electric field. The film prepared by physical vapor deposition has high hardness, low friction coefficient, good wear resistance and chemical stability. It is widely used in the field of semiconductor preparation, and more information about physical vapor deposition can be found in the Chinese patent document with application number 200410064483.8. [0003] In order to form a thin film with better uniformity, a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/02C23C14/56C23C14/06
Inventor 聂佳相
Owner SEMICON MFG INT (SHANGHAI) CORP