Ion injection and plasma deposition equipment and method for processing films by using plasmas

A plasma and ion implantation technology, applied in the field of plasma treatment, can solve the problems of continuous ion implantation of workpieces to be processed, and achieve the effects of uniform and dense texture, reduction of production cost and improvement of production efficiency

Active Publication Date: 2013-06-12
SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defect that the ion implantation and plasma deposition equipment in the prior art cannot perform continuous ion implantation and plasma deposition and simultaneously process two surfaces of the workpiece to be processed, the present invention provides a method that can continuously, Ion implantation and plasma deposition equipment that can selectively perform ion implantation and plasma deposition on one side of the film or on both sides of the film at the same time

Method used

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  • Ion injection and plasma deposition equipment and method for processing films by using plasmas
  • Ion injection and plasma deposition equipment and method for processing films by using plasmas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] figure 2 The vacuum chamber part 8 of an ion implantation and plasma deposition thin film equipment provided by the present invention is provided with an unwinding roller 81, a transition wheel 82, a tension adjustment roller 83, a traction wheel 84, and a winding roller 85 , a cooling roller 86 , an opening 87 for ion implantation, an opening 88 for plasma deposition, and a vacuum port 9 .

[0040] The opening for ion implantation and the opening for plasma deposition are respectively connected with a magnetic filter vacuum arc ion source (such as figure 1 Parts A and B in ) are connected, and there is also a voltage (not shown) between the openings 87 and 88 and B to accelerate the ion beam emitted by the ion source. The opening is rectangular, wherein the dimension of the side perpendicular to the axial direction of the cooling roller is 50 mm, and the dimension of the side in the other direction is 265 mm. The diameter of the cooling roll shaft is 70 mm, the dist...

Embodiment 2

[0042] Embodiment 2, deposit the copper film of 25 nanometers on each side of polyimide (PI) thin film (implantation copper+deposition copper)

[0043] Experimental process: (1) Place a roll of polyimide (PI) film (thickness 0.025 mm, width 270 mm) on the unwinding roller, pass one end of the PI film through the tension adjustment mechanism in turn, all cooling rollers, tension The adjustment mechanism is finally fixed on the winding device. Put cooling water at 0-10°C into the cooling roller, and vacuumize to make the vacuum degree 5×10 -4 Pa. Turn on the ion source and turn on the accelerating voltage. Run the PI film at 2 m / min.

[0044] (2) All copper ion sources are used. The ion implantation voltage is 5KV, and the implantation dose is 3×10 14 atoms / cm2; the plasma deposition voltage is 0.2KV, and the ion beam current is 40 mA. The thickness of the copper film on the obtained film is about 25 nanometers, and the texture of the metal layer is uniform and dense.

Embodiment 3

[0045] Embodiment 3, deposit the copper film of 200 nanometers on each side of polyimide (PI) thin film (implantation copper+deposition copper)

[0046] (1) Except that the running speed of the PI film is 0.3 m / min, all other operations are the same as step (1) in Example 2.

[0047] (2) All copper ion sources are used. The ion implantation voltage is 6KV, and the implantation dose is 1×10 16 atoms / cm 2 ; The plasma deposition voltage is 0.3KV, and the ion beam current is 70 mA. The thickness of the copper film (injected copper+deposited copper) on the obtained film is about 200 nanometers, and the texture of the metal layer is uniform and dense.

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Abstract

The invention provides ion injection and plasma deposition equipment, which comprises an ion source and a vacuum chamber, wherein the wall of the vacuum chamber is provided with a vacuumizing port and at least one opening for communicating with the ion source; the vacuum chamber is internally provided with an unreeling roller, a cooling part and a reeling roller; the cooling part comprises at least one cooling roller; the cooling roller, the unreeling roller and the reeling roller are mutually parallel, and the axial direction of the cooling roller is perpendicular to the direction in which the plasmas enter the vacuum chamber; the cooling roller is in one-to-one correspondence to the opening in a horizontal height, or the opening is in one-to-one correspondence to the cooling roller in the left to right direction or in the front to back direction; or the cooling roller is positioned just below or just above the opening correspondingly. The invention also provides a method for processing films by using the plasmas. The equipment provided by the invention can be used for carrying out a continuous plasma deposition and / or ion injection operation to the films.

Description

technical field [0001] The invention relates to an ion implantation and plasma deposition equipment and a plasma treatment method, in particular to a device capable of performing continuous ion implantation and plasma deposition on thin films and a method for continuous plasma treatment on thin films. Background technique [0002] Cathodic vacuum arc plasma deposition (FVAPD) technology is an ion-assisted deposition technology developed on the basis of arc deposition. It uses metal plasma generated by metal vapor vacuum arc ion source (MEVVA source) for metal deposition and film formation. This metal plasma deposition film-making technology has many advantages, such as: fast film deposition rate, strong film adhesion, dense texture, high finish, thick film, etc., so it is very popular. However, in the process of plasma deposition film formation, large particles (large particles that are not fully plasmaized during vacuum arc discharge) are often introduced into the film, whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/46C23C14/48C23C14/56
Inventor 谢新林杨念群
Owner SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
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