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Method for collecting silicon powder from slurry generated during back lapping process using centrifuge, and centrifuge therefor

A technology of back grinding and centrifuge, which is applied in the direction of centrifuge, centrifuge with rotating drum, silicon, etc., which can solve the problems of low collection performance and low purity of silicon powder

Inactive Publication Date: 2012-06-20
SILFINE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] However, the method of using a filter to collect silicon powder has the following disadvantages: the filter needs to be replaced frequently, when the amount of silicon powder contained in the waste slurry is small, the amount of the collected silicon powder is small, the collection performance is low, and because the filter components are mixed with the collected silicon powder, which has a lower purity

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  • Method for collecting silicon powder from slurry generated during back lapping process using centrifuge, and centrifuge therefor
  • Method for collecting silicon powder from slurry generated during back lapping process using centrifuge, and centrifuge therefor
  • Method for collecting silicon powder from slurry generated during back lapping process using centrifuge, and centrifuge therefor

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Embodiment Construction

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0055] figure 1 The processing of a semiconductor wafer is illustrated. Such as figure 1 As exemplified in (a), a silicon wafer is produced by cutting a silicon single crystal ingot into a thickness of approximately 600 to 800 μm and grinding one surface thereof into a mirror shape. Such as figure 1 As illustrated in (b), a circuit pattern "d" is formed on the top surface of the wafer. Such as figure 1 As exemplified in (c), by the back grinding process of the post-processing step, the back surface "e" of the wafer having the circuit pattern "d" on its top surface is ground so that the wafer having an initial thickness of about 600˜800 μm is processed into a thickness of approximately 200 μm.

[0056] Semiconductor wafers made by cutting a single crystal silicon ingot have a purity of approximately 99.999999999% (11N). Therefore, when the b...

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Abstract

There are provided a method for collecting silicon powder from slurry generated during a back lapping process by using a centrifuge, and the centrifuge therefor. The method for collecting silicon powder from slurry generated in a back lapping process by using a centrifuge with a bowl and a screw shaft being both installed horizontally, comprises: a collection step S1 of collecting silicon powder on inner surface of the bowl of the centrifuge in which the slurry is supplied while stopping the screw shaft and rotating the bowl at high speed so that the silicon powder and fluid are separated from the slurry, the separated silicon powder is collected on inner surface of the bowl and the fluid is discharged to a fluid outlet for a time predetermined to collect the silicon powder on inner surface of the bowl; and a discharge step S2 of discharging the silicon powder collected on inner surface of the bowl in which supply of the slurry stops, the bowl rotates at reduced speed to maintain the collected silicon powder on inner surface of the bowl, and the screw shaft which stops in the collection step S1 rotates to discharge the silicon powder collected on inner surface of the bowl for a time predetermined to discharge the silicon powder collected on inner surface of the bowl in the collection step S1.

Description

technical field [0001] The present invention relates to a method for collecting silicon powder from a waste slurry produced by a back lapping process using a centrifuge to collect silicon powder from a waste slurry produced by a back lapping process, and to a centrifuge used in the process . Background technique [0002] Generally, materials are mainly classified into conductors, semiconductors, and insulators according to their electrical conductivity. In a pure state, semiconductors exhibit properties similar to insulators. However, the conductivity of a semiconductor increases by adding impurities, or the semiconductor temporarily becomes conductive by light or thermal energy. [0003] Semiconductors are widely used in the high-tech electronics industry, for example, in addition to integrated circuit devices including diodes, transistors, etc., there are thermal electron emission devices, charge-coupled devices (CCDs) such as electronic cameras, and the like. Semicondu...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B04B3/04
CPCC01B33/02B04B1/2016B04B3/04
Inventor 林承龙金圣信
Owner SILFINE
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