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Power device with a self-aligned suicide and a method for fabricating the device

A power device, self-alignment technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult to obtain, large safe working area, etc., to reduce masking process steps and improve control accuracy. Effect

Active Publication Date: 2011-02-02
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a large safe operating area in traditional VDMOS devices

Method used

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  • Power device with a self-aligned suicide and a method for fabricating the device
  • Power device with a self-aligned suicide and a method for fabricating the device
  • Power device with a self-aligned suicide and a method for fabricating the device

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Embodiment Construction

[0014] Embodiments of the present invention disclose an improved power device with salicide contacts and a method for manufacturing the power device. In the following, embodiments of the present invention will describe the power device and its manufacturing method by taking a vertical structure power device as an example. However, those skilled in the art should understand that the following descriptions are also applicable to other power devices. The vertical structure power device includes contacts formed on the gate region and the body contact region, the step of forming the contacts is realized by a silicide (eg, salicide) process that at least substantially achieves self-alignment. The vertical structure power device may also include one or more spacer spacers, each spacer spacer being aligned at least between the gate region and the edge of the body contact region. The body contact region may be formed by implanting into the interior of the device in a manner that is at...

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PUM

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Abstract

An improved power device with a self-aligned suicide and a method for fabricating the device are disclosed. An example power device is a vertical power device that includes contacts formed on gate and body contact regions by an at least substantially self-aligned silicidation (e.g., salicide) process. The example device may also include one or more sidewall spacers that are each at least substantially aligned between edges of the gate region and the body contact region. The body contact region may also be implanted into the device in at least substantial self-alignment to the sidewall spacer.The method may also include an at least substantially self-aligned silicon etch.

Description

technical field [0001] The present invention relates to semiconductor devices and processes thereof, and more particularly, the present invention relates to power devices and their manufacture. Background technique [0002] Power devices, such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Insulated Gate Bipolar Transistor (IGBT), Super Junction MOSFET, Vertical Structure Double Diffused Metal Oxide Semiconductor Device (VDMOS), Vertical Structure Metal Oxide Semiconductor Device ( VMOS) and the like usually have many excellent device characteristics, for example, higher breakdown voltage, larger safe operating area (SOA), lower on-resistance, etc. In addition, power devices also have the advantages of lower production costs and higher yields. [0003] A typical VDMOS device (not shown) may include a P-type body region aligned with a polysilicon gate. An N+ type source region and a P+ type body contact region can be formed in the P type body region. The sa...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78H01L29/06
CPCH01L29/41766H01L29/66727H01L29/7802H01L29/7395H01L29/456H01L29/4933H01L29/66333H01L29/1095H01L29/66719H01L29/665
Inventor 唐纳德·R·迪斯尼奥格杰·米历克
Owner CHENGDU MONOLITHIC POWER SYST
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