166 results about "Suicide mortality" patented technology

A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

Methods are presented for fabricating transistor gate structures, wherein upper and lower metal suicides are formed above a gate dielectric. In one example, the lower silicide is formed by depositing a thin first silicon-containing material over the gate dielectric, which is implanted and then reacted with a first metal by annealing to form the lower silicide. A capping layer can be formed over the first metal prior to annealing, to prevent oxidation of the metal prior to silicidation, and a barrier layer can be formed over the lower silicide to prevent reaction with subsequently formed silicon material. In another example, the lower silicide is a multilayer silicide structure including a plurality of metal silicide sublayers.

An electrostatic discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the gate electrode located in between. A first silicide layer is formed in the first diffusion region. A silicide block region is formed between the gate electrode and the first suicide layer. A third diffusion region is formed below the first silicide layer to partially overlap the first diffusion region. The third diffusion region and first silicide layer have substantially the same shapes and dimensions. The third diffusion region and a portion below the gate electrode located at the same depth as the third diffusion region contain impurities of a second conductivity type. The third diffusion region has an impurity concentration that is higher than that of the portion below the gate electrode.

Silicidation of a polysilicon line having frcc upper sidewalls is performed so that no stress is applied to the sidewalls of the polysilicon line, resulting in the formation of a reduced stress silicide structure. This is accomplished by forming a polysilicon line having spacers on either side which extend above the upper surface of the polysilicon line but which are spaced from the edge of the polysilicon line. A layer of a metal such as titanium or tungsten is provided in contact with the top surface polysilicon line. The structure is annealed to cause the metal to react with the polysilicon to form a layer of silicide. Since the upper side portions of the polysilicon line are spaced away from the spacers during the silicidation anneal, the growing silicide region has room to expand without being subjected to lateral stresses in the silicidation process. The suicide is formed in a reduced stress condition, as compared to conventional processes, so that the silicide layer produced will be more readily converted to the desired low resistivity phase of silicide.

The invention pertains to the field of security for aircraft and other vehicles, and more particularly to systems for preventing the hijacking, commandeering or suicide bombing of aircraft, or other vehicle(s). Aircraft system and vehicle system embodiments of the invention have one or more kinds of automating computers capable of safely controlling either an aircraft or vehicle in one or more types of common, well-proven, or yet-to-be-developed, computer-automated modes. The system provides mechanical control linkage disabling means interfaced with control signal receiving means responsive to wireless, or hard-wired, transmitted security-related control signal(s). Control linkage disabling means are located within a series of physical control linkage components of a vehicle at a point subsequent to where manual control input is initiated and prior to where computer automated control is provided. The disabling means renders ineffectual the mechanical control needed for one or more humans to control or direct a vehicle.

A semiconducting structure and a method of forming thereof, includes a substrate having a p-type device region and an n-type device region; a first-type suicide contact to the n-type device region; the first-type suicide having a work function that is substantially aligned to the n-type device region conduction band; and a second-type silicide contact to the p-type device region; the second-type silicide having a work function that is substantially aligned to the p-type device region valence band. The present invention also provides a semiconducting structure and a method of forming therefore, in which the silicide contact material and silicide contact processing conditions are selected to provide strain based device improvements in pFET and nFET devices.

A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and / or Rn are ionized to create a plasma having an electron density of at least about 1e12 cm−3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

A suicide resistor for inclusion in a BEOL layer, and a method of forming the same that provides few additional manufacturing steps. The method allows formation of a passive resistor during BEOL processing without high temperature anneals that would damage other BEOL wiring structures. In particular, the method includes forming a silicide over a polysilicon base in a trough, where the silicide provides the desired resistivity and has a silicidation temperature less than a damaging temperature of the plurality of BEOL layers.

A heat exchanger device includes an extruded body that includes one or more layers of channels for coolant flow therethrough, the channels generally having inner diameters of between about 50 microns to about 2000 microns. The device is formed of a material having a high thermal conductivity to facilitate transfer of heat from the heating components present in the subject cooling application to the coolant passing through the heat exchanger and to be compatible with materials of the heating components. The device material is selected from the group consisting of ceramic oxides, ceramic carbides, ceramic nitrides, ceramic borides, ceramic suicides, metals, and intermetallics, and combinations thereof. The heat exchanger device is formed from an extruded filament that is arranged to give the desired channel configuration. The filament includes a central, removable material and an outer material that forms the channel walls upon removal of the central material.

A semiconductor device with an electric converter element on a diaphragm is provided, in which the diaphragm has an improved thermal shielding or blocking capability from a semiconductor substrate without lowering the mechanical strength of a leg of the diaphragm. The semiconductor device includes of a semiconductor substrate, a diaphragm mechanically connected to the substrate by a thermally-resistive leg, an electric converter element provided on the diaphragm, an electronic circuit formed on the substrate, and an electric path located on the leg for electrically connecting the electric converter element and the electronic circuit. The diaphragm is electrically insulated and thermally separated from the substrate. The electric converter element conducts a conversion between a physical quantity and an electric input / output signal. The electric path is made of a metal suicide to decrease its thermal conductivity without decreasing its electrical conductivity. The device is applicable to various sensors, generators, and actuators using heat.

A method of preventing an inmate from committing suicide is disclosed wherein an oximeter having an RF transmitter associated therewith is mounted on a bracelet which is locked onto the inmate's wrist or ankle. The RF transmitter transmits data collected by the oximeter and furnishes the same to a control station monitor including an RF receiver. Should the oximeter sense that the oxygen saturation level of the inmate has dropped to a predetermined level, an alarm is automatically activated to enable personnel to rush to the inmate's cell or room. If the oximeter is a pulse oximeter, pulse rate data will also be transmitted to the central station so that the alarm will be activated should the pulse rate of the inmate drop to a predetermined level.

Methods are presented for fabricating transistor gate structures, wherein upper and lower metal suicides are formed above a gate dielectric. In one example, the lower silicide is formed by depositing a thin first silicon-containing material over the gate dielectric, which is implanted and then reacted with a first metal by annealing to form the lower silicide. A capping layer can be formed over the first metal prior to annealing, to prevent oxidation of the metal prior to silicidation, and a barrier layer can be formed over the lower silicide to prevent reaction with subsequently formed silicon material. In another example, the lower silicide is a multilayer silicide structure including a plurality of metal silicide sublayers.

A method for depositing layers of a gate electrode is provided. The method includes depositing a doped polysilicon layer, a thin tungsten silicide layer, and a metal layer. In one aspect, the doped polysilicon layer and the thin tungsten silicide layer are deposited within an integrated processing system. In a further aspect, depositing the thin tungsten silicide layer includes exposing a polysilicon layer to a silicon source, depositing a tungsten silicide layer, and exposing the tungsten suicide layer to a silicon source.

A method of oxidizing a substrate having area of about 30,000 mm<2 >or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and / or Rn are ionized to create a plasma having an electron density of at least about 1e12 cm<-3 >and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

A door handle has an elongated member pivotally connected with a plate member. The elongated member has a toe portion which interacts with the plate member. In this way, the elongated member is at least partially retained by the plate member at each end. The door handle provides an anti-ligature design that thwarts suicide attempts by persons attempting to affix or hang ligatures on the door handle. The door handle is also easily operable by those with disabilities.

Provided are a highly integrated semiconductor device with a silicide layer, which can secure a contact margin, and a method of manufacturing the highly integrated semiconductor device. The highly integrated semiconductor device includes a gate electrode formed on a semiconductor substrate. A source region and a drain region are formed in predetermined upper portions of the semiconductor substrate on two sides of the gate electrode such that each of the source region and the drain region includes a lightly doped drain (LDD) region and a heavily doped region. A suicide layer is formed on the gate electrode, the source region, and the drain region. The silicide layer has a sufficient thickness to function as an ohmic contact and is formed on the LDD region and the heavily doped region of each of the source region and the drain region.

The present invention relates to a method for forming metal-silicide catalyst nanoparticles with controllable diameter. The method according to embodiments of the invention leads to the formation of ‘active’ metal-suicide catalyst nanoparticles, with which is meant that they are suitable to be used as a catalyst in carbon nanotube growth. The nano-particles are formed on the surface of a substrate or in case the substrate is a porous substrate within the surface of the inner pores of a substrate. The metal-silicide nanoparticles can be Co-silicide, Ni-silicide or Fe-silicide particles. The present invention relates also to a method to form carbon nanotubes (CNT) on metal-silicide nanoparticles, the metal-silicide containing particles hereby acting as catalyst during the growth process, e.g. during the chemical vapour deposition (CVD) process. Starting from very defined metal-containing nanoparticles as catalysts, the diameter of grown CNT can be well controlled and a homogeneous set of CNT will be obtained.

A dual gate electrode semiconductor device and related method of formation are disclosed. The semiconductor device comprises a first gate electrode made of a metal silicide layer and a second gate electrode made of a metal layer, wherein the metal suicide is formed from the same metal as the metal layer.

Provided are a highly integrated semiconductor device with a silicide layer, which can secure a contact margin, and a method of manufacturing the highly integrated semiconductor device. The highly integrated semiconductor device includes a gate electrode formed on a semiconductor substrate. A source region and a drain region are formed in predetermined upper portions of the semiconductor substrate on two sides of the gate electrode such that each of the source region and the drain region includes a lightly doped drain (LDD) region and a heavily doped region. A suicide layer is formed on the gate electrode, the source region, and the drain region. The silicide layer has a sufficient thickness to function as an ohmic contact and is formed on the LDD region and the heavily doped region of each of the source region and the drain region.

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon / tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

The present invention is a system and method of deriving and computing features and indices that predict the likelihood of psychological and neurological adverse events such as suicidal thoughts and / or actions. The method of the present invention further predicts the likelihood of suicidal thoughts and / or actions prior to and or during treatment for psychological disease. To obtain such features and indices, power spectrum and time domain values are derived from biopotential signals acquired from the subject being tested. The system and method identify people who are likely to experience changing, especially worsening, symptoms of psychological and neurological adverse events such as suicidal thoughts or actions and who therefore may be at risk (e.g. suicide).

The present invention pertains to forming respective suicides on multiple transistors in a single process. High performance is facilitated with simple and highly integrated process flows. As such, transistors, and an integrated circuit containing the transistors, can be fabricated efficiently and at a low cost. The different suicides can be formed with different materials and / or to different thicknesses. As such, the silicides can have different electrical characteristics, such as resistivity and conductivity. These different attributes instill the transistors with different work functions when formed as gate contacts thereon. This provides an integrated circuit containing the transistors with diverse operating capabilities allowing for the execution of operations requiring more flexibility and / or functionality.

Provided is iron suicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron suicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a suicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.

The invention provides an anti-climbing stair for a high-voltage electric wire tower and relates to a stair. A board shaped like a Chinese character 'Tu' (9) is connected with the face at the lower part of a connection flange (3) at the lowermost part of the high-voltage electric wire tower; the lower part of the convex position of the board shaped like the Chinese character 'Tu' is fixedly connected with the upper end of a channel steel jacket (5); the lower end of the channel jacket is fixedly connected with a forward bending part at the lower end of a back supporting board (10); the both sides of the face at the front part of the back supporting board are movably connected with the inner ends of a plurality of steel roll stairs (6) through a plurality of pin shafts (14); the steel roll stairs are located at a horizontal position, and limiting convex blocks (12) are respectively arranged at each upper part of the steel roll stairs, which is tightly adhered to an upward bending rod (13); splicing rods (11) are respectively arranged at the back part of a connecting rod (7) corresponding to the upper part of the other end of each upward bending rod. The foldable stair arranged at the lower part of the high-voltage electric wire tower disclosed by the invention can be used for effectively preventing children or suicides from climbing the high-voltage electric wire tower.

A suicide cap structure and method of fabricating a suicide cap having a low sheet resistance. The method provides a semiconductor substrate and a MOSFET structure comprising a gate insulator on the substrate, an Si-containing gate electrode on the gate insulator layer, and source / drain diffusions. Atop the gate electrode and source / drain diffusions is formed a layer of metal used in forming a silicide region atop the transistor gate electrode and diffusions; an intermediate metal barrier layer formed atop the silicide forming metal layer; and, an oxygen barrier layer formed atop the intermediate metal barrier layer. As a result of annealing the MOSFET structure, resulting formed silicide regions exhibit a lower sheet resistance. As the intermediate metal barrier layer comprises a material exhibiting tensile stress, the oxygen barrier layer may comprise a compressive material for minimizing a total mechanical stress of the cap structure and underlying layers during the applied anneal.

Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned suicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion / n-well (cathode), the p-substrate, the second n-well and the second p+ / n+diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide--similar to a field oxide--under the poly gate.

Exposing through a wall opening of a psychiatric facility stall shower as a plumbing fixture, a water outlet to which is splined an anti-suicide conical handle, wherein the mere unsplining of the handle make accessible for repair the plumbing fixture water outlet.