Phase change memory circuit structure capable of inhibiting current leakage between bit lines

Abstract

The invention provides a phase change memory circuit structure capable of inhibiting current leakage between bit lines, comprising multiple word lines, multiple bit lines, a memory array formed by multiple phase change memory cells respectively connected on one bit line and one word line, and a plurality of control units, wherein, each phase change memory cell comprises a phase change resistance and a gate tube, wherein, the phase change resistance is formed by a phase change material, and one end of the phase change resistance is connected with the corresponding bit line; the gate tube is connected between the other end of the phase change resistance and the corresponding word line; each input end of each control unit is respectively connected with one bit line; and each output end of the control unit is connected with the common connecting point of the phase change resistance and the gate tube of the phase change memory unit on the corresponding bit line, and is respectively used for lowering the electric potential of the common connecting point of the phase change resistance and the gate tube of the unselected phase change memory unit on the corresponding bit line, thus the leaked current is prevented from flowing to the phase change resistance of the unselected phase change memory unit, thereby inhibiting the current leakage between the bit lines, and effectively improving the reliability of the memory.

Description

technical field [0001] The invention relates to a phase-change memory circuit structure, in particular to a phase-change memory circuit capable of suppressing leakage current between bit lines. Background technique [0002] Phase-change memory technology is based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s and early 1970s. It is a memory device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. How to reduce the device material, etc. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material undergoes reversible phase transition between amorphous state and polycrystalline state. By distinguishing the high resistance in the a...

AI Technical Summary

Problems solved by technology

Since phase change resistors are extremely sensitive to current and voltage, these leakage currents can cause data corruption in adjacent unselected cells, reducing the reliability of phase change memory

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