Measuring method and device for characterizing a semiconductor component

A measurement method and semiconductor technology, which is applied in the direction of single semiconductor device testing, measuring equipment, measuring electricity, etc., to achieve the effects of simplified analysis and processing and low equipment cost
CN101971040AActive Publication Date: 2011-02-09FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
Publication Date
2011-02-09

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Abstract

The invention relates to a measuring method for characterizing a semiconductor component (1) having at least one pn junction and a measuring surface, which is the front and / or rear of the semiconductor component and which has at least one contacting subarea, which is covered by a metallization or is intended for coverage by a metallization, comprising the following steps: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component (1) for separating charge carrier pairs in the semiconductor component (1) and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component (1) using at least one detection unit. It is essential that in at least one step A, at least one predetermined excitation subarea of the measuring surface has an intensity of the excitation radiation which is predetermined for this excitation subarea applied thereto and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the excitation subarea applied thereto, wherein the excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and / or entirely or partially overlap it. Furthermore, the invention relates to a measuring device for performing such a method.
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Description

technical field

[0001] The invention relates to a measuring method for characterizing semiconductor components according to the preamble of claim 1 and a measuring device for semiconductor components according to the preamble of claim 22 . Background technique

[0002] For the determination of physical parameters, in particular loss mechanisms / loss structures, in semiconductor components, spatially resolved measuring methods are advantageous, since certain physical parameters or loss mechanisms can be assigned to the thus determined spatial subdivisions of semiconductor components, whereby for example Spatial inhomogeneities can be easily detected and analyzed during the production of semiconductor components.

[0003] These methods are used in particular for the characterization of semiconductor components in the form of semiconductor solar cells or precursors of such solar cells during the development process, ie semiconductor components having at least one PN junction. I...

Claims

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