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Measuring method and device for characterizing a semiconductor component

A measurement method and semiconductor technology, which is applied in the direction of single semiconductor device testing, measuring equipment, measuring electricity, etc., to achieve the effects of simplified analysis and processing and low equipment cost

Active Publication Date: 2011-02-09
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, with the usual measurement methods, the description of the solar cell series resistance network cannot be obtained by measuring at the no-load voltage of the solar cell

Method used

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  • Measuring method and device for characterizing a semiconductor component
  • Measuring method and device for characterizing a semiconductor component
  • Measuring method and device for characterizing a semiconductor component

Examples

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Embodiment Construction

[0094] figure 1 The application of an exemplary embodiment of the measuring method according to the invention for measuring a semiconductor component 1 designed as a solar cell with two metallization lines 2 a and 2 b running parallel to one another is shown, which metallization The lines are the bus bars of the metallization structure.

[0095] For the measurement, a conventional photoluminescence measuring device is used which is extended with a correction unit with two optical filters.

[0096] During the measurement, the battery is not electrically connected. A total of three measurements were carried out, wherein in each measurement the cameras of the measuring device were photographed with a measurement time of one second in each case. The three measurements differ only in the shielding conditions for the excitation beam. The measuring surfaces are respectively figure 1 Front side of the solar cell shown in a,b,c,d.

[0097] In the first measurement ( figure 1 a) I...

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Abstract

The invention relates to a measuring method for characterizing a semiconductor component (1) having at least one pn junction and a measuring surface, which is the front and / or rear of the semiconductor component and which has at least one contacting subarea, which is covered by a metallization or is intended for coverage by a metallization, comprising the following steps: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component (1) for separating charge carrier pairs in the semiconductor component (1) and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component (1) using at least one detection unit. It is essential that in at least one step A, at least one predetermined excitation subarea of the measuring surface has an intensity of the excitation radiation which is predetermined for this excitation subarea applied thereto and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the excitation subarea applied thereto, wherein the excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and / or entirely or partially overlap it. Furthermore, the invention relates to a measuring device for performing such a method.

Description

technical field [0001] The invention relates to a measuring method for characterizing semiconductor components according to the preamble of claim 1 and a measuring device for semiconductor components according to the preamble of claim 22 . Background technique [0002] For the determination of physical parameters, in particular loss mechanisms / loss structures, in semiconductor components, spatially resolved measuring methods are advantageous, since certain physical parameters or loss mechanisms can be assigned to the thus determined spatial subdivisions of semiconductor components, whereby for example Spatial inhomogeneities can be easily detected and analyzed during the production of semiconductor components. [0003] These methods are used in particular for the characterization of semiconductor components in the form of semiconductor solar cells or precursors of such solar cells during the development process, ie semiconductor components having at least one PN junction. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2656G01R31/2605H02S50/10Y02E10/50
Inventor J·卡斯滕森A·舒特H·福尔W·瓦尔塔M·凯斯曼
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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