Method for preparing superhigh-purity aluminum fine grain high-orientation target

A high-orientation, ultra-high technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of high liquid nitrogen consumption, difficulty in producing large-scale high-purity aluminum targets, and increased production costs , to achieve the effects of reducing energy consumption, eliminating deformation inhomogeneity, and refining grains

Inactive Publication Date: 2011-04-06
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of process consumes a large amount of liquid nitrogen when producing high-purity aluminum targets, especially when producing large-size high-purity aluminum plates, the amount of liquid nitrogen consumed

Method used

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  • Method for preparing superhigh-purity aluminum fine grain high-orientation target
  • Method for preparing superhigh-purity aluminum fine grain high-orientation target
  • Method for preparing superhigh-purity aluminum fine grain high-orientation target

Examples

Experimental program
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Effect test

Embodiment 1

[0031] First, put the ultra-high-purity aluminum ingot with a purity greater than 99.9995 wt% and a size of Ф220×180mm obtained by casting into a resistance furnace and heat it up to 630°C with the furnace, keep it warm for 6 hours, take it out and cool it to room temperature in air; The final ultra-high-purity aluminum ingot is heated to 300°C, and after 3 hours of heat preservation, it is placed on the anvil head of the press, and the ingot is forged into a cuboid through two forgings, and then as figure 1 , 2 As shown, make the X direction of the workpiece coincide with the pressing direction as figure 2 a, 40% reduction of the workpiece as follows figure 2 b. Lift the anvil head and turn the workpiece 90° so that the Y direction of the workpiece is consistent with the pressing direction figure 2 c, and then carry out 40% reduction on the workpiece as follows figure 2 d, in the order of X→Y→Z→X..., repeat forging for 18 times, control the moving speed of the anvil a...

Embodiment 2

[0033]Using the same steps as in Example 1, the ultra-high-purity aluminum ingot is high-purity aluminum with a purity greater than 99.9995 wt%, with a size of Ф220×294mm, a homogenization annealing temperature of 600°C, and an annealing time of 18 hours. The number of forging times is 12, the multidirectional forging temperature is 270°C, the moving speed of the anvil head is 10mm / s, and the pass reduction is 30%. The workpiece is rolled into a plate of 800×1000×14mm, and the pass reduction is controlled at 20% during the rolling process. Recrystallization annealing is carried out on the plate, the annealing temperature is 200°C, and the annealing time is 120 hours. After annealing, the ultra-high-purity aluminum fine-grained and highly oriented target material is obtained. The grains are mainly uniform and fine equiaxed grains, and more than 90% of them have already occurred. recrystallized with an average grain size of 190 um, as Figure 7 , 8 , as shown in 9.

Embodiment 3

[0035] Using the same steps as in Example 1, the ultra-high-purity aluminum ingot is high-purity aluminum with a purity greater than 99.9995 wt%, with a size of 150×120×90 mm, a homogenization annealing temperature of 600° C., and an annealing time of 2 hours. The number of multi-directional forging is 12 passes, the temperature of multi-directional forging is 250°C, the moving speed of the anvil is 20mm / s, and the reduction of each pass is 40%; the workpiece is rolled into a plate of 600×500×5mm; the rolling process The reduction in the middle pass is controlled at 15%; recrystallization annealing is carried out on the plate, the annealing temperature is 50°C, and the annealing time is 60 minutes. Axial crystals are dominant, and more than 90% have recrystallized, with an average grain size of 150um, such as Figure 10 , 11 shown.

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Abstract

The invention relates to the field of alloy materials, in particular to a method for preparing superhigh-purity aluminum fine grain high-orientation target, which comprises: performing uniform annealing of superhigh-purity aluminum ingots at a high temperature of 500 to 630 DEG C to eliminate casting internal stress and refine cast structure; performing multi-pass multi-directional forging of superhigh-purity aluminum ingots at 150 to 300 DEG C to obtain high-strain refined superhigh-purity aluminum grains on the premise of no change in the shape of the ingots; placing the multi-directionally forged workpiece in ice water to cool the workpiece to 0 to 5 DEG C and performing cold rolling, wherein the pass compression amount is controlled to be 5 to 30 percent, and through the inter-pass cooling by ice water of the plate, the temperature rise in the plate rolling process is controlled and the crystallization of the plate is inhibited; and performing low-temperature annealing at 50 to 250 DEG C. The method can be used to produce targets which have a thickness of 5 to 25 millimeters, an average grain size f of 200 micrometers and a (200) direction-based grain orientation, and while the targets operate at 200 DEG C, the structure of the targets is stable.

Description

technical field [0001] The invention relates to the field of alloy materials, in particular to a method for preparing an ultra-high-purity aluminum fine-grained and highly oriented target material. Background technique [0002] Physical vapor deposition (PVD) is the most critical technology in the production process of semiconductor chips and TFT-LCD. The sputtering metal target for PVD is one of the most important raw materials in the production of semiconductor chips and the preparation and processing of TFT-LCD. Sputtering metal The most used target materials are high-purity aluminum and ultra-high-purity aluminum alloy targets. According to the principle of sputtering process, the finer the grain of the target material, the more uniform the composition structure, the more concentrated the orientation, the smaller the surface roughness of the target material, and the better the quality of the film formed on the silicon wafer by physical vapor deposition. Therefore, The t...

Claims

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Application Information

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IPC IPC(8): C22F1/04C23C14/14
Inventor 班春燕朱庆丰崔建忠
Owner NORTHEASTERN UNIV
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