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Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal

A strip waveguide and laser device technology, which is applied in the field of optoelectronic device preparation, achieves the effects of high controllability, low cost and strong arbitrariness

Inactive Publication Date: 2011-04-06
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are also no reports on waveguide lasers

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  • Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal
  • Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal
  • Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal

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Embodiment 1

[0014] Embodiment 1: Method for preparing strip waveguide laser device in neodymium-doped lutetium vanadate crystal

[0015] 1) Polishing the two surfaces perpendicular to the crystal axis direction (c-axis) of the neodymium-doped lutetium vanadate crystal (2), and cleaning the polished sample;

[0016] 2) Use a femtosecond laser (1) to burn the sample along the a-axis direction of the crystal through any polished surface to produce two traces with a distance of 30 microns. A strip waveguide (3) is formed between the two traces. Use a femtosecond laser (1) with a pulse repetition frequency of 200 kHz, an energy of 8 microjoules / pulse, a femtosecond laser with a writing speed of 1 mm / s, a wavelength of 1047 nm, and a pulse width of 350 femtoseconds.

[0017] 3) Polishing the two end faces of the crystal perpendicular to the direction of the strip waveguide.

[0018] 4) Coating the laser cavity film (7, 8) on the polished end face. The resonant cavity film in the direction of...

Embodiment 2

[0020] Embodiment 2: Method for preparing strip waveguide laser device in neodymium-doped lutetium vanadate crystal

[0021] 1) Polishing the two surfaces perpendicular to the crystal axis direction (c-axis) of the neodymium-doped lutetium vanadate crystal (2), and cleaning the polished sample;

[0022] 2) Use a femtosecond laser (1) to burn the sample along the a-axis direction of the crystal through any polished surface to produce two traces with a distance of 30 microns. A strip waveguide (3) is formed between the two traces. Use a femtosecond laser (1) with a pulse repetition frequency of 200 kHz, an energy of 9 microjoules / pulse, a writing speed of 2 mm / s, a wavelength of 1047 nm, and a pulse width of 350 femtoseconds.

[0023] 3) Polishing the two end faces of the crystal perpendicular to the direction of the strip waveguide.

[0024] 4) Coating the laser cavity film (7, 8) on the polished end face. The resonant cavity film in the direction of passing light is require...

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Abstract

The invention relates to a method for preparing a slab waveguide laser device in a neodymium-doped lutecium vanadate crystal, belonging to the technical field of optoelectronic device preparation. The method mainly comprises the following steps of: forming a slab waveguide in the neodymium-doped lutecium vanadate crystal and realizing the laser output on the slab waveguide. A femtosecond laser the pulse repetition rate of which is 200 KHz, the energy of which is 2-17 millijoule / pulse and the write-in speed of which is 0.2-15mm / second is adopted to form the slab waveguide in the neodymium-doped lutecium vanadate crystal. After laser resonant cavity film coating is carried out on the end surface of the waveguide, a pumping laser is utilized to carry out pumping on the neodymium-doped lutecium vanadate slab waveguide to output an infrared laser the wave length of which is 1063+ / -1 or 1340+ / -1nm.

Description

technical field [0001] The invention relates to a method for preparing a strip waveguide laser device in a neodymium-doped lutetium vanadate crystal, belonging to the technical field of optoelectronic device preparation. Background technique [0002] Neodymium-doped lutetium vanadate (Nd doped lutecium vanadate, or abbreviated as Nd:LuVO 4 ) crystal is a widely used laser gain medium, which has strong polarization absorption, large stimulated emission cross section, high absorption coefficient, wide absorption band, small dependence on pump wavelength, and low laser threshold. It can generate laser with a wavelength of 1064 or 1340 nanometers, and has important applications in laser processing, integrated optics, and optical communications. A waveguide is a basic element of integrated optics, which is defined as a high-refractive-index region with a high refractive index relative to the circumferential medium. In waveguides, light beams are confined to propagate in high-re...

Claims

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Application Information

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IPC IPC(8): H01S3/06
Inventor 陈峰谭杨张怀金路庆明管婧
Owner SHANDONG UNIV
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