Accurately-aligned correction model in photolithographic process

Abstract

The invention discloses an accurately-aligned correction model in a photolithographic process. The correction model directly measures to obtain a first layer of registration data of a polysilicon gate aligning shallow-trench isolation and a second layer of registration data of a contact hole aligning the polysilicon gate; the first layer of registration data and the second layer of registration data perform vector addition to obtain a third layer of registration data of the contact hole aligning shallow-trench isolation; the third layer of registration data is computed to obtain a third layer of maximum horizontal registration offset and a third layer of maximum longitudinal registration offset; when the third layer of maximum horizontal registration offset or the third layer of maximum longitudinal registration offset is larger than a registration tolerance, a system can automatically prevent products from flowing to next project. The accurately-aligned correction model ensures product quality, increases product yield and improves economic benefits.

Description

technical field [0001] The invention relates to a photolithographic process method in the field of semiconductor manufacturing, in particular to a correction model for precise alignment in the photolithographic process. Background technique [0002] Such as figure 1 , figure 2 As shown, in the existing semiconductor manufacturing, most products contain a three-layer structure of shallow trench isolation, polysilicon gate, and contact holes. Precise alignment between these three layers is very important to ensure product quality and improve product yield. The precise alignment among the three layers depends on the alignment marks placed on the mask plate in the photolithography process. In most of the existing products containing this structure, the marks for aligning the polysilicon gate to the shallow trench isolation and the marking for the contact hole to align with the polysilicon gate are placed, but the mark for the contact hole to align with the shallow trench isol...

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Problems solved by technology

However, the cost of this method is relatively huge, which increases the production cost.

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