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Method for judging whether to start processing

A technology for processing start and judgment methods, applied to measurement devices, individual particle analysis, electrical components, etc., can solve problems such as the decrease in the yield of semiconductor components

Inactive Publication Date: 2011-04-20
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Here, when a certain amount of particles remains in the chamber, the particles adhere to many semiconductor elements formed on the wafer to cause defects, and thus the yield of semiconductor elements made of the wafer decreases

Method used

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  • Method for judging whether to start processing
  • Method for judging whether to start processing
  • Method for judging whether to start processing

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Experimental program
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Embodiment Construction

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0037] First, a description will be given of a substrate processing apparatus to which the method for judging whether or not to start processing according to the embodiment of the present invention is applied.

[0038] figure 1 It is a cross-sectional view schematically showing the configuration of a substrate processing apparatus to which the method for judging whether or not the processing can be started according to this embodiment is applied. This substrate processing apparatus performs a plasma etching process on a semiconductor device wafer (hereinafter simply referred to as "wafer") as a substrate.

[0039] exist figure 1 Among them, the substrate processing apparatus 10 has a chamber 11 for accommodating a wafer W, and a cylindrical susceptor 12 is arranged in the chamber 11. In the upper part of the chamber 11, a Disc-shaped shower head 13. In add...

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Abstract

The invention provides a method for judging whether to start predetermined process in the presence of relatively high yield of semiconductor device made of base plate, comprising the following steps: repetitively drying air with temperature higher than that for plasma etching of semiconductor device and / or air with low pressure lower than that of semiconductor device at predetermined time after cleaning parts of a base plate processing device (10) having a chamber (11) for accommodating a wafer (w) and an exhausting system (14) for exhausting the chamber (11); measuring the number of granulesflowing in a primary exhausting pipe (15) of the exhausting system (14); monitoring the change degree of the number of measured granules along the time; and judging that the plasma etching process isstarted when the reduction degree of the number of monitored granules is changed.

Description

technical field [0001] The present invention relates to a method and a storage medium for judging whether to start processing, and more particularly to a method for judging whether to start processing in a substrate processing apparatus provided with a decompression chamber for accommodating a substrate and performing processing, and an exhaust system for exhausting the decompression chamber. . Background technique [0002] A substrate processing apparatus for performing plasma processing on a wafer as a substrate includes: a chamber as a decompression chamber for accommodating the wafer; a shower head for introducing a process gas into the chamber; An exhaust system consisting of a susceptor that applies high-frequency power to the chamber, and a pump and piping that exhaust the chamber. The processing gas introduced into the depressurized chamber is excited by high-frequency power to form plasma, and cations and radicals in the plasma are used for plasma processing of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02G01N15/10
CPCH01L21/67069H01L21/67253H01L22/12
Inventor 守屋刚松井英章盐屋雅弘
Owner TOKYO ELECTRON LTD