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X-ray sensor and manufacturing method thereof

A manufacturing method and sensor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of high manufacturing cost, complex structure, and high cost of mask plate, and achieve the reduction of common electrode layers and simple structure , The effect of simple manufacturing method

Inactive Publication Date: 2011-04-20
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the relatively high cost of the mask plate, the manufacturing process of the X-ray sensor is complicated, the manufacturing cost is high and the structure is complicated.

Method used

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  • X-ray sensor and manufacturing method thereof
  • X-ray sensor and manufacturing method thereof
  • X-ray sensor and manufacturing method thereof

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0032] An X-ray sensor, comprising a plurality of sensing units, each sensing unit includes a photoelectric sensing element area and a switching element area, the photoelectric sensing element area is provided with a photoelectric sensing element, the switching element area is provided with a switching element, and the photoelectric sensing element area is provided with a switching element. The sensing element includes a photoelectric conversion layer and an etching protection layer, the switching element includes a conductive layer, a first passivation layer and a light-shielding layer covering the switching element, the first passivation layer is arranged between the switching element and the light-shielding layer, The conductive layer extends to the photosensiti...

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Abstract

The invention relates to an X-ray sensor and a manufacturing method thereof. The X-ray sensor comprises a plurality of sensing units, wherein each sensing unit comprises a photoelectric sensing element area and a switching element area; the photoelectric sensing element area is provided with a photoelectric sensing element; the switching element area is provided with a switching element, a first passivation layer and a shading layer covering the switching element; the first passivation layer is arranged between the switching element and the shading layer; the switching element comprises a conductive layer which extends to the photoelectric sensing element area; the photoelectric sensing element comprises a photoelectric conversion layer and an etching protection layer; the conductive layer and the etching protection layer are respectively formed on two sides of the photoelectric conversion layer so as to form two electrodes of the photoelectric sensing element; and the shading layer extends to the photoelectric sensing element area and is electrically connected with the etching protection layer. The X-ray sensor is simple in manufacturing method and low in cost.

Description

technical field [0001] The invention relates to an X-ray sensor and a manufacturing method thereof. Background technique [0002] With the gradual enhancement of people's self-care awareness, various non-invasive medical detection methods are favored by people. Among many non-destructive detection methods, computed tomography technology has been widely used in our real life. In the composition of computer tomography equipment, an indispensable part is the X-ray sensor. [0003] The basic structure of flat panel X-ray sensor is as follows: figure 1 As shown, each sensing unit of the X-ray sensor 12 includes a photodiode 13 and a field effect transistor (Field Effect Transistor, FET) 14, the gate of the field effect transistor 14 is connected to the scanning line of the X-ray sensor 12 (Gate Line) 15 is connected, the drain of the field effect transistor 14 is connected to the data line (Data Line) 16 of the X-ray sensor 12 , and the photodiode 13 is connected to the source...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L31/115H01L31/0232H01L21/82
Inventor 邱承彬于祥国孔杰祁刚金立波
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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