Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of forming pattern of insulating resin film on surface of substrate

A semiconductor and insulating layer technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of forming holes with desired cone angles in difficult-to-insulate layers, and forming holes with desired shapes in difficult-to-resin insulation layers , It is difficult to form an insulating layer pattern, etc.

Inactive Publication Date: 2011-05-04
DENSO CORP
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of a thick insulating layer, it is difficult to form a good insulating layer pattern
[0006] 3. It is difficult to form a tapered hole with a desired taper angle in the insulating layer
However, since a hole is formed by scraping the resin insulating layer to one side, it is difficult to form a hole having a desired shape in the resin insulating layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of forming pattern of insulating resin film on surface of substrate
  • Semiconductor device and method of forming pattern of insulating resin film on surface of substrate
  • Semiconductor device and method of forming pattern of insulating resin film on surface of substrate

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0044] Refer below Figures 6A-6E A first embodiment of the present invention is described. Figures 6A-6D shows the method of manufacturing a semiconductor device according to the first embodiment, and Figure 6E A partial detailed view of the semiconductor device according to the first embodiment is shown.

[0045] exist Figure 6A In the shown process, a semiconductor substrate 1 is prepared. Then, in Figure 6B In the illustrated process, the first electrode layer 2 is formed on the surface of the semiconductor substrate 1 . Then, in Figure 6C In the shown process, the resin insulating layer 3 is formed on the surface of the semiconductor substrate 1 so that the first electrode layer 2 can be covered with the resin insulating layer 3 . Then, in Figure 6D In the illustrated process, the tapered hole 31 is formed in the resin insulating layer 3 by cutting out an unnecessary portion of the resin insulating layer 3 so that the first electrode layer 2 can be exposed th...

no. 2 example

[0074] Refer below Figure 12A and 12B A second embodiment of the present invention is described.

[0075] According to the second embodiment, as Figure 12A As shown, the second electrode layer 14 is formed in the tapered hole 31 . And, if Figure 12B As shown, a conductor 60 is formed on and connected to the second electrode layer 14 .

[0076] Similar to the first embodiment, the surface of the first electrode layer 2 is cut away by the cutter head 4 so that the contact surface 21 can be exposed. The contact surface 21 of the first electrode layer 2 serves as the bottom of the tapered hole 31 . For example, the first electrode layer 2 can be made of aluminum. The second electrode layer 14 is formed on and around the bottom of the tapered hole 31 . The second electrode layer 14 can be formed by using a diamond grinding wheel, a GC (green SiC) grinding wheel, an electroplating grinding wheel, etc. Figure 12A The shapes shown are patterned. The conductor 60 is formed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a method for manufacturing a semiconductor device. An electrode layer (2) is formed on a surface of a semiconductor substrate (1). Furthermore a resin insulating layer (3) is formed on the surface of the semiconductor substrate (1) so the electrode layer (2) can be covered by the resin insulating layer (3). A conical aperture (31) is formed in the resin insulating layer (3) through a byte (4) whose rake angle is zero or negative. The conical aperture (31) is provided with the following components: an opening which is limited by the resin insulating layer (3), a bottom (21) which is limited by the electrode layer (2), and a side wall (10) for connecting the opening (31) to the bottom (21). The rake angle of the byte (4) is zero or negative.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for patterning a resin insulating layer on a substrate of the semiconductor device. Background technique [0002] As disclosed in, for example, JP-3069468, photolithography using chemical reactions is known to selectively remove insulating layers of semiconductor devices such as Metal Oxide Semiconductor (MOS) devices to form holes in the insulating layers. [0003] Especially, in a semiconductor device such as a power transistor, a resin insulating layer is used to electrically isolate electrodes and wiring patterns on the surface of a substrate. The resin insulating layer is patterned through exposure, development, and etching processes in photolithography. However, this approach involves the following problems: [0004] 1. The thicker the insulating layer, the longer it takes to etch the insulating layer. [0005] 2. There is a trade-off between the thickness of the insulating l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/41
CPCH01L2224/11
Inventor 富坂学龟山美知夫深谷辉和加藤和人福田丰田井明赤松和夫
Owner DENSO CORP