Preparation method of Si-Ge film and manufacture method of semiconductor device

Abstract

The invention relates to a preparation method of a Si-Ge film and a manufacture method of a semiconductor device. The preparation method of the Si-Ge film comprises the following steps of: providing a substrate and forming a grid electrode on the substrate surface and comprehension layers arranged at both sides of the grid electrode; etching the substrate at one side of the grid electrode far from the comprehension layers to form a groove; baking the groove at a temperature from 828 DEG C to 850 DEG C and then forming a Si-Ge layer covering the groove. By setting a suitable baking temperature and baking time, a Si-Ge interface in favorable shape is obtained and the product quality is improved.

Description

technical field [0001] The invention relates to a method for preparing a silicon-germanium thin film and a method for manufacturing a semiconductor device using the method for preparing the silicon-germanium thin film. Background technique [0002] Silicon germanium (Si1-xGex) material is an infinite miscible substitutional solid solution formed by covalent bonding of silicon and germanium. SiGe materials generally have four forms: amorphous, polycrystalline, single crystal, and superlattice. Because of its high carrier mobility, the energy band width can be continuously adjusted with the composition of germanium, etc., and it can be combined with The current mature silicon planar technology is compatible. Therefore, silicon germanium materials can be widely used in the production of high-speed heterojunction bipolar transistors (HBTs), modulation doped field effect transistors (MODFETs), and photodetectors in microelectronics and optoelectronics. Devices and other devices....

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Problems solved by technology

This is because the high-temperature baking process greatly improves the mobility of silicon atoms. Under the action of stress, misfit dislocation occurs on the interface between the silicon-germanium layer and the silicon substrate, forming an arc-shaped interface, while the silicon-germanium layer with an arc shape The layer interface 101 will increase the length of the channel 102 that the carriers actually pass through, thus affecting the device performance

In addition, when the silicon substrate is treated at a temperature that is too low, such as a temperature lower than 600 degrees Celsius, the impurity components on the silicon surface will not be removed, which will affect the contact between the germanium-silicon interface and the silicon surface, thereby affecting the subsequent process and products of the device. quality

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